9.3 Inverse Modeling of Doping Profiles

With decreasing feature sizes of integrated circuits, the lateral distribution of dopants in the channel region of MOS devices are beginning to play a significant role (reverse short channel effects and others). At the same time, metrology to characterize the variations of doping profiles in in lateral direction are at an early stage of development yet [72]. In this situation simulation offers an alternative to determine these distributions in the vertical and the lateral direction. Several attempts have been made in this direction [12,41,44].