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- 1
-
K. Aoyama, H. Kunitomo, K. Tsuneno, H. Sato, K. Mori, and H. Masuda.
Rigorous Statistical Process Variation Analysis for
Quarter-m CMOS with Advanced TCAD Metrology.
In Second Int. Workshop on Statistical Metrology, Kyoto, Japan,
June 1997.
- 2
-
B. Baccus, T. Wada, N. Shigyo, M. Norishima, H. Nakajima, K. Inou, T. Iinuma,
and H. Iwai.
A Study of Nonequilibrium Diffusion Modeling - Applications to
Rapid Thermal Annealing and Advanced Bipolar Technologies.
IEEE Trans.Electron Devices, 39(3):648-661, 1992.
- 3
-
E. Bär and J. Lorenz.
3-D Simulation of LPCVD Using Segment-Based Topography
Discretization.
IEEE Trans.Semiconductor Manufacturing, 9(1):67-73, 1996.
- 4
-
D.M. Betz.
XLISP: An Object-Oriented Lisp, Version 2.1.
Apple, Peterborough, New Hampshire, USA, 1989.
- 5
-
T. Binder, K. Dragosits, T. Grasser, R. Klima, M. Knaipp, H. Kosina, R. Mlekus,
V. Palankovski, M. Rottinger, G. Schrom, S. Selberherr, and M. Stockinger.
MINIMOS-NT User's Guide.
Institut für Mikroelektronik, 1998.
- 6
-
W. Bohmayr and S. Selberherr.
Trajectory Split Method for Monte Carlo Simulation of Ion
Implantation Demonstrated by Three-Dimensional Poly-Buffered LOCOS Field
Oxide Corners.
In Int. Symp. on VLSI Technology, Systems, and Applications,
pages 104-107, Taipei, Taiwan, 1995.
- 7
-
D.S. Boning and P.K. Mozumder.
DOE/Opt: A System for Design of Experiments, Response Surface
Modeling, and Optimization Using Process and Device Simulation.
IEEE Trans.Semiconductor Manufacturing, 7(2):233-244, 1994.
- 8
-
M. Brox, E. Wohlrab, and W. Weber.
A Physical Lifetime Prediction Method for Hot-Carrier-Stressed
P-MOS Transistors.
In Int.Electron Devices Meeting, pages 525-528, 1991.
- 9
-
Johann Cervenka.
CGG: Ein Gittergenerator für die Bauelementesimulation.
Diplomarbeit, Technische Universität Wien, 1999.
- 10
-
P. Chan and R. Lee.
The Java Class Libraries: An Annotated Reference.
Addison-Wesley, 1997.
- 11
-
J.J. Clement.
Vacancy Supersaturation Model for Electromigration Failure Under
DC and Pulsed DC Stress.
J.Appl.Phys., 71(9):4264-4268, 1992.
- 12
-
A. Das, D. Newmark, I. Clejan, M. Foisy, M. Sharma, S. Venkatesan,
S. Veeraraghavan, V. Misra, B. Gadepally, and L. Parrillo.
An Advanced MOSFET Design Approach and a Calibration Methodology
using Inverse Modeling that Accurately predicts Device Characteristics.
In Int.Electron Devices Meeting, pages 687-690, 1997.
- 13
-
B.E. Deal and A.S. Grove.
General Relationship for the Thermal Oxidation of Silicon.
J.Appl.Phys., 36(12):3770-3778, 1965.
- 14
-
B.S. Doyle and K.R. Mistry.
A Lifetime Prediction Method for Hot-Carrier Degradation in
Surface-Channel p-MOS Devices.
IEEE Trans.Electron Devices, 37(5):1301-1307, 1990.
- 15
-
F. Fasching.
The Viennese Integrated System for Technology CAD
Applications-Data Level Design and Implementation.
Dissertation, Technische Universität Wien, 1994.
- 16
-
F. Fasching, C. Fischer, S. Selberherr, H. Stippel, W. Tuppa, and H. Read.
A PIF Implementation for TCAD Purposes.
In W. Fichtner and D. Aemmer, editors, Simulation of
Semiconductor Devices and Processes, volume 4, pages 477-482, Konstanz,
1991. Hartung-Gorre.
- 17
-
P.M. Ferguson.
Motif Reference Manual, volume Six B.
O'Reilly & Associates, 1994.
- 18
-
C. Fischer, P. Habas, O. Heinreichsberger, H. Kosina, Ph. Lindorfer,
P. Pichler, H. Pötzl, C. Sala, A. Schütz, S. Selberherr,
M. Stiftinger, and M. Thurner.
MINIMOS 6 User's Guide.
Institut für Mikroelektronik, Technische Universität
Wien, Austria, March 1994.
- O1
-
P. Fleischmann, R. Sabelka, A. Stach, R. Strasser, and S. Selberherr.
Grid Generation for Three Dimensional Process and Device
Simulation.
In SISPAD'96 [84], pages 161-166.
- 20
-
A. Geist, A Beguelin, J. Dongarra, W. Jiang, R. Manchek, and V.Sunderam.
PVM: Parallel Virtual Machine -- A Users' Guide and Tutorial
for Networked Parallel Computing.
MIT Press, 1994.
- 21
-
J. Gosling and F. Yellin.
The Java Application Programming Interface: Window Toolkit and
Applets, volume 2.
Addison-Wesley, 1996.
- 22
-
T. Grasser, V. Palankovski, G. Schrom, and S. Selberherr.
Hydrodynamic Mixed-Mode Simulation.
In Meyer and Biesemans [51], pages 247-250.
- O6
-
T. Grasser, R. Strasser, M. Knaipp, K. Tsuneno, H. Masuda, and S. Selberherr.
Calibration of a Mobility Model for Quartermicron CMOS
Devices.
In Zobel and Moeller [104], pages 75-77.
- O7
-
T. Grasser, R. Strasser, M. Knaipp, K. Tsuneno, H. Masuda, and S. Selberherr.
Device Simulator Calibration for Quartermicron CMOS Devices.
In Meyer and Biesemans [51], pages 93-96.
- 25
-
P. Habas.
Analysis of Physical Effects in Small Silicon MOS Devices.
Dissertation, Technische Universität Wien, 1993.
- 26
-
S. Halama.
The Viennese Integrated System for Technology CAD
Applications-Architecture and Critical Software Components.
Dissertation, Technische Universität Wien, 1994.
- 27
-
S. Halama, F. Fasching, C. Fischer, H. Kosina, E. Leitner, P. Lindorfer, Ch.
Pichler, H. Pimingstorfer, H. Puchner, G. Rieger, G. Schrom, T. Simlinger,
M. Stiftinger, H. Stippel, E. Strasser, W. Tuppa, K. Wimmer, and
S. Selberherr.
The Viennese Integrated System for Technology CAD Applications.
Microelectronics Journal, 26(2/3):137-158, 1995.
- 28
-
S. Halama, F. Fasching, C. Fischer, H. Kosina, E. Leitner, Ch. Pichler,
H. Pimingstorfer, H. Puchner, G. Rieger, G. Schrom, T. Simlinger,
M. Stiftinger, H. Stippel, E. Strasser, W. Tuppa, K. Wimmer, and
S. Selberherr.
The Viennese Integrated System for Technology CAD Applications.
In F. Fasching, S. Halama, and S. Selberherr, editors,
Technology CAD Systems, pages 197-236, Wien, 1993. Springer.
- 29
-
S. Halama, Ch. Pichler, G. Rieger, G. Schrom, T. Simlinger, and S. Selberherr.
VISTA--User Interface, Task Level, and Tool Integration.
IEEE Trans.Computer-Aided Design, 14(10):1208-1222, 1995.
- 30
-
M. Heinrich, M. Budil, and H.W. Pötzl.
Simulation of Arsenic and Boron Diffusion During Rapid Thermal
Annealing in Silicon.
In W. Eccleston and P.J. Rosser, editors, 20th European Solid
State Device Research Conference - ESSDERC 90, pages 205-208, Bristol,
1990. IOP.
- 31
-
D. Heller and P.M. Ferguson.
Motif Programming Manual, volume Six A.
O'Reilly & Associates, Sebastopol, CA, 1994.
- 32
-
A. Höfler and N. Strecker.
On the Coupled Diffusion of Dopants and Silicon Point Defects.
Technical Report 94/11, Integrated Systems Laboratory, ETH
Zürich, 1994.
- 33
-
R.B. Hulfachor, K.W. Kim, M.A. Littlejohn, and C.M. Osburn.
Comparative Analysis of Hot Electron Injection and Induced
Device Degradation in Scaled 0.1 m SOI n-MOSFET's Using Monte Carlo
Simulation.
IEEE Electron Device Lett., 17(2):53-55, 1996.
- 34
-
H. Hwang, D.-H. Lee, and J.M. Hwang.
Degradation of MOSFETs Drive Current Due to Halo Ion
Implantation.
In Int.Electron Devices Meeting, pages 567-570, 1996.
- 35
-
Institut für Mikroelektronik, Technische Universität Wien, Austria.
VISTA Documentation 1.3-1, VLISP Manual, January 1996.
- 36
-
ISE Integrated Systems Engineering.
ISE TCAD Manuals vol. 1, release 4, 1997.
- 37
-
ISE Integrated Systems Engineering.
ISE TCAD Manuals vol. 3, release 4, 1997.
- 38
-
ISE Integrated Systems Engineering.
ISE TCAD Manuals vol. 4, release 4, 1997.
- 39
-
ISE Integrated Systems Engineering.
ISE TCAD Manuals vol. 5, release 4, 1997.
- 40
-
ISE Integrated Systems Engineering.
ISE TCAD Manuals vol. 6, release 4, 1997.
- 41
-
N. Khalil.
ULSI Characterization with Technology Computer-Aided Design.
Dissertation, Technische Universität Wien, 1995.
- 42
-
H. Kirchauer and S. Selberherr.
Rigorous Three-Dimensional Photoresist Exposure and Development
Simulation over Nonplanar Topography.
IEEE Trans.Computer-Aided Design of Integrated Circuits and
Systems, 16(12):1431-1438, 1997.
- 43
-
M. Knaipp.
Modellierung von Temperatureinflüssen in
Halbleiterbauelementen.
Dissertation, Technische Universität Wien, 1998.
- 44
-
Z.K. Lee, M.B. McIlrath, and D.A. Antoniadis.
Inverse Modeling of MOSFETs using I-V Characteristics in the
Subthreshold Region.
In Int.Electron Devices Meeting, pages 683-686, 1997.
- 45
-
E. Leitner.
Diffusionsprozesse in dreidimensionalen Strukturen.
Dissertation, Technische Universität Wien, 1997.
- 46
-
E. Leitner, W. Bohmayr, P. Fleischmann, E. Strasser, and S. Selberherr.
3D TCAD at TU Vienna.
In J. Lorenz, editor, 3-Dimensional Process Simulation, pages
136-161, Wien, 1995. Springer.
- 47
-
T.J. Lorenzen and V.L. Anderson.
Design of Experiments.
Marcel Dekker, 1991.
- 48
-
R. Martins.
On the Design of Very Low Power Integrated Circuits.
Dissertation, Technische Universität Wien, 1999.
- 49
-
R. Martins, W. Pyka, R. Sabelka, and S. Selberherr.
Modeling Integrated Circuit Interconnections.
In Proc. Int. Conf. on Microelectronics and Packaging, pages
144-151, Curitiba, Brazil, August 1998.
- 50
-
C. Mazure and M. Orlowski.
Guidelines for Reverse Short-Channel Behavior.
IEEE Electron Device Lett., EDL-10(12):556-558, 1989.
- 51
-
K. De Meyer and S. Biesemans, editors.
Simulation of Semiconductor Processes and Devices, Leuven,
Belgium, 1998. Springer.
- 52
-
T. J. Mowbray and R. Zahavi.
The Essential CORBA.
OMG/Wiley, 1995.
- 53
-
M. Neeracher.
Scheduling for Heterogeneous Opportunistic Workstation
Clusters.
Hartung-Gorre, Konstanz, 1198.
- O2
-
C. Pichler, R. Plasun, R. Strasser, and S. Selberherr.
Simulation Environment for Semiconductor Technology Analysis.
In SISPAD'96 [84], pages 147-148.
- 55
-
Ch. Pichler.
Integrated Semiconductor Technology Analysis.
Dissertation, Technische Universität Wien, March 1997.
- O3
-
Ch. Pichler, R. Plasun, R. Strasser, and S. Selberherr.
High-Level TCAD Task Representation and Automation.
IEEE J.Technology Computer Aided Design, May 1997.
http://www.ieee.org/journal/tcad/accepted/pichler-may97/.
- O11
-
C.M. Pichler, R. Plasun, R. Strasser, and S. Selberherr.
Simulation of Complete VLSI Fabrication Processes with
Heterogeneous Simulation Tools.
IEEE Trans.Semiconductor Manufacturing, 12(1):76-86, 1999.
- 58
-
H. Pimingstorfer.
Integration und Anwendung von Simulatoren in der
CMOS-Entwicklung.
Dissertation, Technische Universität Wien, 1993.
- 59
-
M.R. Pinto.
PISCES IIB.
Stanford University, 1985.
- 60
-
R. Plasun.
Optimization of VLSI Semiconductor Devices.
Dissertation, Technische Universität Wien, 1999.
- O8
-
R. Plasun, M. Stockinger, R. Strasser, and S. Selberherr.
Simulation Based Optimization Environment and It's Application
to Semiconductor Devices.
In IASTED Int. Conf. on Applied Modelling and Simulation, pages
313-316, Honolulu, Hawaii, USA, August 1998.
- 62
-
Platform Computing Corporation, Toronto, Canada.
LSF Load Sharing Facility, May 1998.
www.platform.com.
- 63
-
A. Poncet.
Two-Dimensional Simulation of Local Oxidation in VLSI
Processes.
In K.M. DeMeyer, editor, VLSI Process and Device Modeling,
pages 1-45. Katholieke Universiteit Leuven, 1983.
- 64
-
H. Puchner.
Advanced Process Modeling for VLSI Technology.
Dissertation, Technische Universität Wien, 1996.
- 65
-
W. Pyka, R. Martins, and S. Selberherr.
Efficient Algorithms for Three-Dimensional Etching and
Deposition Simulation.
In Meyer and Biesemans [51], pages 16-19.
- 66
-
T. Quarles, A.R. Newton, D.O. Pederson, and A. Sangiovanni-Vincentelli.
SPICE 3 Version 3F5 User's Manual.
Department of Electrical Engineering and Computer Sciences,
University of California, Berkeley, March 1994.
- 67
-
M. Radi.
Three-Dimensional Simulation of Thermal Oxidation.
Dissertation, Technische Universität Wien, 1998.
- 68
-
C.S. Rafferty, H.-H. Vuong, S.A. Eshraghi, M.D. Giles, M.R. Pinto, and S.J.
Hillenius.
Explanation of Reverse Short Channel Effect by Defect
Gradients.
In Int.Electron Devices Meeting, pages 311-314, 1993.
- 69
-
E. Rank and U. Weinert.
A Simulation System for Diffusive Oxidation of Silicon: A
Two-Dimensional Finite Element Approach.
IEEE Trans.Computer-Aided Design, 9(5):543-550, May 1990.
- 70
-
G. Rieger.
Ein graphischer Editor für Entwurf von Halbleiterbauteilen.
Dissertation, Technische Universität Wien, 1996.
- 71
-
E. Rorris, R.R. O'Brien, F.F. Morehead, R.F. Lever, J.P. Peng, and G.R.
Srinivasan.
A New Approach to the Simulation of the Coupled Point Defects
and Impurity Diffusion.
IEEE Trans.Computer-Aided Design, 9(10):1113-1122, October
1990.
- 72
-
M. Rottinger, N. Seifert, and S. Selberherr.
Analysis of AVC Measurements.
In A. Touboul, Y. Danto, J.-P. Klein, and H. Grünbacher, editors,
28th European Solid-State Device Research Conference, pages 344-347,
Bordeaux, France, 1998. Editions Frontieres.
- 73
-
R. Sabelka, R. Martins, and S. Selberherr.
Accurate Layout-Based Interconnect Analysis.
In Meyer and Biesemans [51], pages 336-339.
- 74
-
R. Sabelka and S. Selberherr.
SAP -- A Program Package for Three-Dimensional Interconnect
Simulation.
In Proc. Intl. Interconnect Technology Conference, pages
250-252, Burlingame, California, June 1998.
- 75
-
K. Saito, M. Sakaue, T. Okubo, and K. Minegishi.
Application of Statistical Analysis to Determine the Priority
for Improving LSI Technology.
IEEE Trans.Semiconductor Manufacturing, 5(1):47-54, 1992.
- 76
-
H. Sakamoto, S. Kumashiro, M. Hiroi, M. Hane, and H. Matsumoto.
Simulation of Reverse Short Channel Effects with a Consistent
Point-Defect Diffusion Model.
In Simulation of Semiconductor Processes and Devices, pages
137-140, Cambridge, Massachusetts, 1997.
- 77
-
T.J. Sanders, K. Rekab, F.M. Rotella, and D.P. Means.
Integrated Circuit Design for Manufacturing Through Statistical
Simulation of Process Steps.
IEEE Trans.Semiconductor Manufacturing, 5(4):368-372, 1992.
- 78
-
E.W. Scheckler and A.R. Neureuther.
Models and Algorithms for Three-Dimensional Topography
Simulation with SAMPLE-3D.
IEEE Trans.Computer-Aided Design, 13(2):219-230, 1994.
- 79
-
Semiconductor Industry Association.
The National Technology Roadmap for Semiconductors, 1997.
- 80
-
V. Senez, S. Bozek, and B. Baccus.
3-Dimensional Simulation of Thermal Diffusion and Oxidation
Processes.
In Int.Electron Devices Meeting, pages 705-708, 1996.
- 81
-
Sigma-C GmbH, Thomas-Dehler-Straße 9, D-81737 Munich.
SC-Top Users Manual, v0.4 beta edition, 1998.
http://www.sigma-c.de/sc-top/sc-top.html.
- 82
-
SILVACO International, Santa Clara, CA.
VWF Interactive Tools User's Manual, first edition, March 1994.
- 83
-
K. Singhal and J.F. Pinel.
Statistical Design Centering and Tolerancing using Parametric
Sampling.
In Proc.Int.Symp.Circuits and Systems, pages 882-885. IEEE,
1980.
- 84
-
Simulation of Semiconductor Processes and Devices, Tokyo, Japan, 1996.
Business Center for Academic Societies Japan.
- 85
-
P. Spellucci.
Solving General Convex QP Problems via an Exact Quadratic
Augmented Lagrangian with Bound Constraints.
http://www.mathematik.th-darmstadt.de/ags/ag8/spellucci, 6 1996.
- O10
-
M. Stockinger, R. Strasser, R. Plasun, A. Wild, and S. Selberherr.
A Qualitative Study on Optimized MOSFET Doping Profiles.
In Meyer and Biesemans [51], pages 77-80.
- 87
-
E. Strasser.
Simulation von Topographieprozessen in der Halbleiterfertigung.
Dissertation, Technische Universität Wien, 1994.
- O4
-
R. Strasser, Ch. Pichler, and S. Selberherr.
VISTA - A Framework for Technology CAD Purposes.
In W. Hahn and A. Lehmann, editors, 9th European Simulation
Symposium, pages 450-454, Passau, Germany, October 1997. Society for
Computer Simulation International.
- O5
-
R. Strasser, R. Plasun, and S. Selberherr.
Parallel and Distributed Optimization in Technology Computer
Aided Design.
In Zobel and Moeller [104], pages 78-80.
- O13
-
R. Strasser, R. Plasun, and S. Selberherr.
Practical Inverse Modeling with SIESTA.
In Simulation of Semiconductor Processes and Devices, Kyoto,
September 1999.
Accepted for Publication.
- O12
-
R. Strasser, R. Plasun, M. Stockinger, and S. Selberherr.
Inverse Modeling of Semiconductor Devices.
In Sixth SIAM Conference on Optimization. Society for
Industrial and Applied Mathematics, May 1999.
Accepted for Publication.
- O9
-
R. Strasser and S. Selberherr.
Parallel and Distributed TCAD Simulations using Dynamic Load
Balancing.
In Meyer and Biesemans [51], pages 89-92.
- 93
-
A.D. Stricker.
Simulation based design of ESD protection structures.
PhD thesis, Swiss Federal Intsitute of Technology, Zurich, 1196.
- 94
-
Technology Modeling Associates, Inc., Sunnyvale, California.
TMA Medici, Two-Dimensional Device Simulation Program, Version
4.0 User's Manual, October 1997.
- 95
-
Technology Modeling Associates, Inc., Sunnyvale, California.
TMA TSUPREM-4, Two-Dimensional Process Simulation Program,
Version 6.5 User's Manual, May 1997.
- 96
-
Technology Modeling Associates, Inc., Sunnyvale, California.
TMA WorkBench Version 2.2 User's Manual, February 1997.
- 97
-
T. Tsuchiya, Y. Okazaki, M. Miyake, and T. Kobayashi.
New Hot-Carrier Degradation Mode and Lifetime Prediction Method
in Quarter-Micrometer PMOSFET.
IEEE Trans.Electron Devices, 39(2):404-408, 1992.
- 98
-
H. Umimoto and S. Odanaka.
Three-Dimensional Numerical Simulation of Local Oxidation of
Silicon.
IEEE Trans.Electron Devices, 38(3):505-511, March 1991.
- 99
-
D. W. Walker.
The Design of a Standard Message-Passing Interface for
Distributed Memory Concurrent Computers.
Parallel Computing, 20(4):657-673, April 1994.
- 100
-
M. Welten, R. Clancy, M. Murphy, and W. Lane.
Total DFM Approach for a 0.6m CMOS Process.
In First Int. Workshop on Statistical Metrology, Honolulu,
1996.
- 101
-
Christoph Wittine.
Generation of Two-Dimensional Device Structures from
One-Dimensional Topography, Profile and Layout Data.
Diplomarbeit, Technische Universität Wien, 1998.
- 102
-
S. Wolf.
Silicon Processing for the VLSI Era.
Lattice Press, 1990.
- 103
-
S. Wolf.
The Submicron MOSFET, volume 3 of Silicon Processing for
the VLSI Era.
Lattice Press, Sunset Beach, California, 1995.
- 104
-
R. Zobel and D. Moeller, editors.
Proc. 12th European Simulation Multiconference - Simulation:
Past, Present and Future, Manchester, UK, June 1998. Society for Computer
Simulation.
Rudi Strasser
1999-05-27