[1]   F. Schanovsky, O. Baumgartner, V. Sverdlov, and T. Grasser, “A multi scale modeling approach to non-radiative multi phonon transitions at oxide defects in MOS structures,” Journal of Computational Electronics, vol. 11, no. 3, pp. 218–224, 2012.

[2]   F. Schanovsky and T. Grasser, “On the microscopic limit of the modified reaction-diffusion model for the negative bias temperature instability,” in Conference Proceedings of International Reliability Physics Symposium (IRPS 2012), 2012. poster: International Reliability Physics Symposium (IRPS), Californi, USA; 2012-04-17 – 2012-04-19.

[3]   F. Schanovsky and T. Grasser, “Bias temperature instabilities in highly-scaled MOSFETs.” invited; talk: 2012 CMOS Emerging Technologies, Vancouver, BC Canada; 2012-07-18 – 2012-07-21, 2012.

[4]   W. Gös, F. Schanovsky, H. Reisinger, B. Kaczer, and T. Grasser, “Bistable defects as the cause for NBTI and RTN,” Solid State Phenomena, vol. 178-179, pp. 473–482, 2011. invited.

[5]   T. Grasser, B. Kaczer, W. Gös, H. Reisinger, T. Aichinger, P. Hehenberger, P.-J. Wagner, F. Schanovsky, J. Franco, M. Toledano-Luque, and M. Nelhiebel, “The paradigm shift in understanding the bias temperature instability: From reaction-diffusion to switching oxide traps,” IEEE Transactions on Electron Devices, vol. 58, no. 11, pp. 3652–3666, 2011. invited.

[6]   F. Schanovsky, W. Gös, and T. Grasser, “Multiphonon hole trapping from first principles,” Journal of Vacuum Science & Technology B, vol. 29, no. 1, pp. 01A201–1–01A201–5, 2011.

[7]   H. Ceric, R. Orio, F. Schanovsky, W. Zisser, and S. Selberherr, “Multilevel simulation for the investigation of fast diffusivity paths,” in Proceedings of the 16th International Conference on Simulation of Semiconductor Processes and Devices, pp. 135–138, 2011. talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 2011-09-08 – 2011-09-10.

[8]   W. Gös, F. Schanovsky, T. Grasser, H. Reisinger, and B. Kaczer, “Advanced modeling of oxide defects for random telegraph noise,” in Proceedings of the 21st International Conference on Noise and Fluctuations, 2011. talk: International Conference on Noise and Fluctuations (ICNF), Toronto, Canada; 2011-06-12 – 2011-06-16.

[9]   W. Gös, F. Schanovsky, H. Reisinger, B. Kaczer, and T. Grasser, “Bistable defects as the cause for NBTI and RTN,” in GADEST 2011: Abstract Booklet, p. 153, 2011. invited; talk: Gettering and Defect Engineering in Semiconductor Technology, Loipersdorf, Austria; 2011-09-25 – 2011-09-30.

[10]   F. Schanovsky, O. Baumgartner, and T. Grasser, “Multi scale modeling of multi phonon hole capture in the context of NBTI,” in Proceedings of the 16th International Conference on Simulation of Semiconductor Processes and Devices, pp. 15–18, 2011. talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 2011-09-08 – 2011-09-10.

[11]   F. Schanovsky and T. Grasser, “On the microscopic limit of the reaction-diffusion model for the negative bias temperature instability,” in Final Report of IEEE International Integrated Reliability Workshop (IIRW 2011), pp. 17–21, 2011. talk: IEEE International Integrated Reliability Workshop, South Lake Tahoe, USA; 2011-10-16 – 2011-10-20.

[12]   F. Schanovsky, W. Gös, and T. Grasser, “An advanced description of oxide traps in MOS transistors and its relation to DFT,” Journal of Computational Electronics, vol. 9, no. 3-4, pp. 135–140, 2010. invited.

[13]   W. Gös, F. Schanovsky, P. Hehenberger, P.-J. Wagner, and T. Grasser, “Charge trapping and the negative bias temperature instability,” in Physics and Technology of High-k Materials 8, pp. 565–589, ECS Transactions, 2010. invited.

[14]   W. Gös, F. Schanovsky, P. Hehenberger, P.-J. Wagner, and T. Grasser, “Charge trapping and the negative bias temperature instability,” in Meet. Abstr. - Electrochem. Soc. 2010, 2010. talk: 218^th ECS Meeting, Las Vegas, USA; 2010-10-10 – 2010-10-15.

[15]   T. Grasser, B. Kaczer, W. Gös, H. Reisinger, T. Aichinger, P. Hehenberger, P.-J. Wagner, F. Schanovsky, J. Franco, P. J. Roussel, and M. Nelhiebel, “Recent advances in understanding the bias temperature instability,” in Proceedings of the 2010 IEEE International Electron Devices Meeting (IEDM), pp. 82–85, 2010. invited; talk: International Electron Devices Meeting (IEDM), San Francisco; 2010-12-06 – 2010-12-08.

[16]   T. Grasser, H. Reisinger, P. Wagner, B. Kaczer, F. Schanovsky, and W. Gös, “The time dependent defect spectroscopy (TDDS) for the characterization of the bias temperature instability,” in Proceedings of the International Reliability Physics Symposium, pp. 16–25, 2010. talk: International Reliability Physics Symposium (IRPS), Anaheim; 2010-05-02 – 2010-05-06.

[17]   F. Schanovsky, W. Gös, and T. Grasser, “Ab-initio calculation of the vibrational influence on hole-trapping,” in Proceedings of the 14^th International Workshop on Computational Electronics (IWCE), pp. 163–166, 2010. talk: International Workshop on Computational Electronics (IWCE), Pisa; 2010-10-26 – 2010-10-29.

[18]   F. Schanovsky, W. Gös, and T. Grasser, “Hole capture into oxide defects in MOS structures from first principles,” in Abstract Book, p. 435, 2010. poster: Ψ_k - 2010 Conference, Berlin; 2010-09-12 – 2010-09-16.

[19]   F. Schanovsky, W. Gös, and T. Grasser, “Mulit-phonon hole-trapping from first-principles,” in Book of Abstracts, p. 54, 2010. talk: Workshop on Dielectrics in Microelectronics (WODIM), Bratislava; 2010-06-28 – 2010-06-30.

[20]   T. Grasser, H. Reisinger, P.-J. Wagner, W. Gös, F. Schanovsky, and B. Kaczer, “The time dependent defect spectroscopy (TDDS) for the characterization of the bias temperature instability.” invited; talk: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Gaeta; 2010-10-11, 2010.

[21]   V. Sverdlov, T. Windbacher, F. Schanovsky, and S. Selberherr, “Mobility modeling in advanced MOSFETs with ultra-thin silicon body under stress,” Journal Integrated Circuits and Systems, vol. 4, no. 2, pp. 55–60, 2009.

[22]   V. Sverdlov, O. Baumgartner, H. Kosina, S. Selberherr, F. Schanovsky, and D. Esseni, “The linear combination of bulk bands-method for electron and hole subband calculations in strained silicon films and surface layers,” in 13^th International Workshop on Computational Electronics, pp. 49–52, 2009. talk: International Workshop on Computational Electronics (IWCE), Beijing; 2009-05-27 – 2009-05-29.

[23]   V. Sverdlov, O. Baumgartner, T. Windbacher, F. Schanovsky, and S. Selberherr, “Impact of confinement and stress on the subband parameters in ultra-thin silicon films,” in Proceedings Intl.Symposium on Microelectronics Technology and Devices (SBMicro), pp. 389–396, 2009. talk: Intl. Symposium on Microelectronics Technology and Devices (SBMicro), Natal; 2009-08-31 – 2009-09-03.

[24]   V. Sverdlov, O. Baumgartner, T. Windbacher, F. Schanovsky, and S. Selberherr, “Impact of confinement of semiconductor and band engineering on future device performance,” in Proceedings 215th Meeting of the Electrochemical Society, Silicon-on-Insulator Technology and Devices, (19/4), pp. 15–26, 2009. invited; talk: 215th Meeting of the Electrochemical Society, Silicon-on-Insulator Technology and Devices, San Francisco; 2009-05-24 – 2009-05-29.

[25]   V. Sverdlov, O. Baumgartner, T. Windbacher, F. Schanovsky, and S. Selberherr, “Thickness dependence of the effective masses in a strained thin silicon film,” in Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices, pp. 51–54, 2009. talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), San Diego; 2009-09-09 – 2009-09-11.

[26]   V. Sverdlov, T. Windbacher, O. Baumgartner, F. Schanovsky, and S. Selberherr, “Valley splitting in thin silicon films from a two-band k⋅p model,” in Proceedings of the 10^th International Conference on Ultimate Integration of Silicon, pp. 277–280, 2009. poster: International Conference on Ultimate Integration of Silicon (ULIS), Aachen; 2009-03-18 – 2009-03-20.

[27]   F. Schanovsky, “Dispersive transport modeling within the multiple trapping framework,” Master’s thesis, Institut für Mikroelektronik, 2008.

[28]   T. Grasser, W. Gös, O. Triebl, P. Hehenberger, P.-J. Wagner, P. Schwaha, R. Heinzl, S. Holzer, R. Entner, S. Wagner, and F. Schanovsky, “3 year report 2005-2007,” tech. rep., E360 - Institut für Mikroelektronik; Technische Universität Wien, 2007.