From a circuit point of view there is no essential difference between gate leakage and subthreshold leakage. This is because a circuit node connected to one or more MOSFET gates is usually also connected to drains. Therefore, the total leakage at a circuit node is a superposition of gate, drain, and other leakage components, and gate leakage needs no special consideration as long as it does not dominate.
Junction leakage is usually negligible at higher dopant concentrations, except, when the pn-junction is so steep or the trap density is so high that tunneling currents occur [77].