symbol | description |
---|---|
symbol |
description |
Physical constants | |
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Boltzmann's constant |
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Plank's constant |
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electron charge |
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speed of light |
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vacuum permittivity |
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vacuum permeability |
Environmental quantities | |
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temperature |
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thermal voltage |
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intrinsic carrier density |
Material parameters | |
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band gap energy |
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saturation velocity |
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carrier mobility |
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relative permittivity |
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insulator permittivity |
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semiconductor permittivity |
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interconnect insulator permittivity |
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interconnect conductor resistivity |
Technology parameters and structural device data | |
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nominal supply voltage |
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minimum supply voltage |
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maximum supply voltage |
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nominal threshold voltage |
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nominal off-state current |
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nominal clock frequency |
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nominal operating temperature |
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transistor width |
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nominal transistor width |
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gate length |
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nominal gate length |
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minimum gate length |
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gate oxide thickness |
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nominal gate oxide thickness |
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gate capacitance per area |
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junction depth |
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nominal junction depth |
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channel doping level |
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interconnect capacitance per length |
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interconnect resistance per length |
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interconnect insulator thickness |
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interconnect metal thickness |
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interconnect width |
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interconnect spacing |
Device physical quantities | |
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donor concentration |
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acceptor concentration |
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surface potential displacement |
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bulk built-in potential |
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gate built-in potential |
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work function difference |
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flat band voltage |
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depletion depth |
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depletion capacitance per area |
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insulator capacitance per area |
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MOSFET conductivity parameter |
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MOSFET body factor |
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fixed interface charge per area |
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reverse saturation current |
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scaling factor |
Terminal quantities | |
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drain voltage |
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gate voltage |
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bulk voltage |
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source voltage |
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drain-source voltage |
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gate-source voltage |
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bulk-source voltage |
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drain current |
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gate current |
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bulk current |
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transfer conductance |
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output conductance |
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drain charge |
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gate charge |
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gate capacitance |
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gate-drain capacitance |
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source-bulk capacitance |
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drain-bulk capacitance |
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base-emitter voltage |
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Early voltage |
Electrical device data | |
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on-state current |
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effective turn-on current |
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off-state current |
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switching charge |
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threshold voltage |
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strong-inversion threshold voltage |
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fitted threshold voltage |
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linear threshold voltage |
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saturation threshold voltage |
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threshold current |
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gate swing |
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surface DIBL parameter |
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surface DIBL rate |
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sub-surface DIBL rate |
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on-state resistance |
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off-state resistance |
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switching capacitance |
VLSI System parameters | |
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supply voltage |
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clock frequency |
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chip diameter |
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number of transistors |
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number of gates |
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logic depth |
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activity ratio |
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standby ratio |
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fan-in |
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fan-out |
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average fan-in/fan-out |
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average interconnect length |
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average load capacitance |
System performance and qualification parameters | |
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delay time |
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inverter delay |
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unloaded-inverter delay |
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gate delay |
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CV/I delay metric |
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RC delay metric |
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interconnect delay time |
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maximum clock frequency |
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power consumption |
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static power consumption |
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dynamic power consumption |
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short-circuit power consumption |
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total power consumption |
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active-mode power consumption |
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standby-mode power consumption |
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switching energy |
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power-delay product |
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CV2 energy metric |
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inverter gain |
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maximum gain |
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normalized noise margins |
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high noise margin |
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low noise margin |
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output voltage swing |
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normalized output voltage swing |
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leakage time |
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minimum clock frequency |
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error probability |
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bit error rate |
Circuit specific quantities | |
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input voltage |
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output voltage |
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inverter crow bar current |
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supply voltage usage ratio |
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effective supply voltage usage ratio |
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critical supply voltage usage ratio |
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unsymmetry factor |
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input high voltage |
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input low voltage |
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output high voltage |
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output low voltage |
Signal processing quantities | |
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complex frequency |
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sampling frequency |
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oversampling frequency |