So far, there are no well-established quantitative criteria for classifying a certain technology as ``Ultra-Low-Power''. Yet, there are some relations between characteristic voltages ( , , and ) and material parameters ( ), which could be used for classification. Considering the fundamental component of digital circuits, the switch, we can identify two characteristic voltages - regardless of the actual realization of the switch:
In an Ultra-Low-Power technology the supply voltage is several hundred millivolts, which is less than the band gap voltage of silicon, and the threshold voltage is between zero (high-performance) and the supply voltage (low-power), and is typically much less than the band gap. The reduction of the power consumption is achieved mainly by the reduced supply voltage, which results in reduced dynamic power.
In a typical CMOS technology the threshold voltage is around 0.8V which
is close to the band gap, and the supply voltage is 2.5V-5V which is
well above the band gap. This is also the case for
low-power CMOS, where reduction of the power consumption is achieved
mainly by down-scaling which results in reduced capacitances.
The difference
which is some times referred to as
voltage drive, determines the speed through the on-state current
which is for a MOSFET in strong inversion
In the case of semiconductor transistors (bipolar and MOS) the
thermal voltage
is the lower limiting
quantity to the threshold and supply voltage.
The reason for this is the fact that the current flowing across
the switch can change by at most
which limits
the ratio of the on and off-state current to