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3.3 VLSI Performance Metric Based on Minimum TCAD Simulations

In this work a new approach to performance metrology and qualification of digital VLSI processes with TCAD simulations was developed. The method yields performance data on the system level directly from raw electrical device data obtained with a minimum set of device simulations. The key performance and qualification parameters are identified, pointing out the differences between these and traditional device performance metrics. The methods to determine the performance and qualification parameters from the device data are described.

3.3.1 Introduction
3.3.2 System Model
3.3.3 Device Simulation
3.3.4 Key Parameters and Informational Parameters
3.3.5 Dynamic Inverter Model
3.3.6 Power Consumption
3.3.7 Noise Margins, Inverter Gain, and Output Swing
3.3.8 Application

G. Schrom