Previous: 2.2.2 Stress Memorization Up: 2.2 Local Strain Techniques Next: 2.2.4 Stress from Shallow Trench Isolation |
The level of stress depends on the thickness of the epitaxial layer and the lattice constant mismatch. Epitaxially grown SiGe is used to induce uniaxial compressive stress in p-channel MOSFETs [Thompson04,Eneman05,Horstmann05,Ouyang05,Bai04,Ouyang05,Zhang05]. In the same manner, tensile stress can be induced in the n-channel MOSFET by using SiC stressors with molefractions around 1 % [Ang04]. SiC was found to induce the same amount of stress as SiGe [Ang05]. It was recently reported that for n-channel MOSFETs the implementation of the SiC source/drain regions provide significant drive current enhancement of up to 50% at a gate length of 50 nm [Chui07].
  | Previous: 2.2.2 Stress Memorization Up: 2.2 Local Strain Techniques Next: 2.2.4 Stress from Shallow Trench Isolation |