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Previous: 6. Simulation Results Up: 6. Simulation Results Next: 6.1.1 Strain-Induced Shift of the Conduction Band Minimum |
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The parameters relevant for the modeling of strain effects on the conduction
bands of Si were extracted from EPM calculations and are given in
Table 6.1. The value for the uniaxial deformation potential
coincides with
the value extracted by Rieger [Rieger93]. The value for the shear
deformation potential
eV
compares well with the values extracted from experimental data: a value of
1 eV [Hensel65] has been predicted from cyclotron resonance
experiments. From more recent measurements of the indirect exciton spectrum of
Si the value
2 eV has been obtained [Laude71]. By
calculations based on a self-consistent perturbation theory [Goroff63] the
value 7.8 eV was obtained for the shear deformation
potential. The effective masses and the band separation
eV between the two lowest
conduction bands at the conduction band minimum are in good agreement to
experimental values
[Hensel65]. Finally, the two parameters defined in (3.89),
and
were extracted from EPM
calculations. These two parameters are used in the analytical expressions for the
effective mass change (3.94), (3.98), and
(3.99), and the valley shift (3.100) induced by shear
strain.
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Previous: 6. Simulation Results Up: 6. Simulation Results Next: 6.1.1 Strain-Induced Shift of the Conduction Band Minimum |