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J01
W. Wessner, J. Cervenka, C. Heitzinger, A. Hössinger, and S. Selberherr
``Anisotropic Mesh Refinement for the Simulation of Three-Dimensional
Semiconductor Manufacturing Processes'', IEEE Transactions on
Computer-Aided Design of Integrated Circuits and Systems, vol. 25, no. 10,
pp. 2129 - 2139, 2006.
J02
J. Cervenka, W. Wessner, E. Al-Ani, T. Grasser, and Selberherr S.
``Generation of Unstructured Meshes for Process and Device Simulation by
Means od Partial Differential Equations'', IEEE Transactions on
Computer-Aided Design of Integrated Circuits and Systems, vol. 25, no. 10,
pp. 2118 - 2128, 2006.
B01
G. Karlowatz, E. Ungersböck, W. Wessner, H. Kosina, and S. Selberherr
''Analysis of Hole Transport in Arbitrarily Strained Germanium''
in SiGe and Ge: Materials, Processing, and Devices, D. Harame, et
al. (Eds.), ser. ECS Transactions, vol. 3, no. 7, The Electrochemical Society, 2006, ISBN:
1-56677-507-8, pp. 443 - 450.
T01
W. Wessner, H. Ceric, Ch. Hollauer, E. Langer, and S. Selberherr:
''Electromigration Reliability TCAD Solutions''
Presentation: SEMICON Europa 2005, (Munich), invited, 2005.
C01
G. Karlowatz, E. Ungersböck, W. Wessner, H. Kosina, and S. Selberherr:
''Analysis of Hole Transport in Arbitrarily Strained Germanium''
in Proc. Meeting Abstracts: 210
Meeting of The Electrochemical
Society, (Cancun), p. 1449, 2006, (CD-rom).
C02
G. Karlowatz, E. Ungersböck, W. Wessner, and H. Kosina:
''Full-Band Monte Carlo Analysis of Electron Transport in Arbitrary Strained Silicon''
in Proc. International Conference of Simulation of Semiconductor Processes
and Devices 2006, (Monterey), pp. 63 - 66, 2006.
C03
G. Karlowatz, W. Wessner, and H. Kosina:
``Effect of Band Structure Discretization on the Performance of Full-Band Monte Carlo Simulation''
in
Mathmod Vienna Proceedings, (Vienna), pp. 4-1 - 4-6, 2006.
C04
A. Nentschev, R. Sabelka, W. Wessner, and S. Selberherr:
''On Chip Interconnect Simulation of Parasitic Capacitances in Periodic Structures''
in The 2005 European Simulation and Modelling Conference Proceedings,
(Porto), pp. 420 - 424, 2005.
C05
W. Wessner, H. Ceric, J. Cervenka, and S. Selberherr:
``Dynamic Mesh Adaptation for Three-Dimensional Elektromigration Simulation''
in Proc. International Conference on Simulation of Semiconductor Processes and
Devices 2005, (Tokyo), pp. 147 - 150, 2005.
C06
W. Wessner, S. Wagner, T. Grasser, and S. Selberherr:
``Meshing Aspects on Three-Dimensional Fin-Fet Device Simulations,''
in Proc. Asia Pacific Microwave Conference (APMC), (New Delhi), 2004,
(CD-rom).
C07
H. Ceric, R. Sabelka, S. Holzer, W. Wessner, S. Wagner, T. Grasser, and
S. Selberherr: ``The Evolution of the Resistance and Current Density During
Electromigration,'' in Proc. Simulation of Semiconductor Processes and
Devices, (Munich), pp. 331 - 334, 2004.
C08
W. Wessner, Ch. Hollauer, A. Hössinger, and S. Selberherr:
''Anisotropic Laplace Refinement for Three-Dimensional Oxidation Simulation''
in Proc. Simulation of Semiconductor Processes and Devices 2004, (Munich),
pp. 165 - 168, 2004.
C09
W. Wessner, H. Ceric, C. Heitzinger, A. Hössinger, and S. Selberherr:
''Anisotropic Mesh Adaption Governed by a Hessian Matrix Metric''
in Proc. Simulation in Industry, 15th European Simulation Symposium, (Delft),
pp. 41 - 46, 2003.
C10
W. Wessner, A. Hössinger, and S. Selberherr:
''Anisotropic Mesh Refinement for Three-Dimensional Diffusion Simulation''
in Beiträge der Informationstagung Mikroelektronik 2003, (Vienna),
pp. 523 - 528, 2003.
C11
W. Wessner, C. Heitzinger, A. Hössinger, and S. Selberherr:
''Error Estimated Driven Anisotropic Mesh Refinement for Three-Dimensional Diffusion Simulation''
in Proc. IEEE International Conference on Simulation of Semiconductor
Processes and Devices, (Boston), pp. 109 - 112, 2003.
D01
W. Wessner:
``Jump and Walk - Ein Punkt-Lokalisierungs-Algorithmus für Komplexe
Dreidimensionale Tetraeder-Gitter-Strukturen''; Supervisor: E. Langer, and
T. Binder; Institut für Mikroelektronik, Technische Universität Wien, 2002.
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Wilfried Wessner: Mesh Refinement Techniques for TCAD Tools