We have simulated a field oxide isolation established by a standard LOCOS
process. Silicon with a 
Å pad oxide is partly masked by a
nitride layer. Into the channel-stop region we implanted
boron at 
. The implanted profile is shown in
Figure 3.7-7. The thick field oxide is grown in pyrogenic steam
ambient (wet oxidation) at 
for 
.
The oxide growth was simulated using an analytical approximation
(Section 4.1). The oxidation enhanced diffusion was
simulated with the models OEDS and OED. The results for
both models are shown in Figure 3.7-8, additionally the
interstitial concentration 
after 
oxidation time as
calculated from model OED is shown in Figure 3.7-9.
The interstitial concentration is two orders of magnitude above equilibrium
at the oxidizing area (Width 
) and decays moderately into the
bulk and more quickly under the nitride mask (Width 
) which is an
effective sink for point defects.
