For large (4.24a) has the solution , while (4.24b) gives , which results in the well-known quantization result for subbands in an infinite potential square well with a single parabolic band. For the difference in energy between the two subbands we get in the limit of large , which is perfectly consistent with the results shown in Fig. 4.6 and Fig. 4.7.
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Fig. 4.8 shows for several film thicknesses that the unprimed subbands split for non-zero shear strain. In ultra-thin films already at moderate stress levels the splitting energy is larger than . In this case the higher subband becomes de-populated, indicating a mobility enhancement in ultra-thin films strained along direction. For small strain values the splitting is linear in strain. For large strain the quantization relations in an infinite square well potential with a single parabolic band are recovered resulting in the largest subband splitting. Uniaxial stress is currently used to enhance performance of modern MOSFETs, where it is introduced in a controllable way. Therefore, the valley splitting can be controlled by adjusting strain and thickness .
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