3.5 Generation and Recombination

Generation and recombination processes are modeled within the the quasi-static approximation including various physical mechanisms. All described models in this section evaluate a model-specific recombination rate $R$. The sum of the calculated rates gives the overall recombination rate for the corresponding carrier type. This overall rate denotes the inhomogeneity of the corresponding continuity equations (3.11) and (3.12). Apart from a possible external optical generation rate, the relevant band-to-band processes in wide $\alpha$-SiC materials are basically Auger recombination and the corresponding inverse process, impact ionization, which determines the avalanche generation rate.

T. Ayalew: SiC Semiconductor Devices Technology, Modeling, and Simulation