3. SiC Physical Modeling

AS DISCUSSED in Chapter 2, 4H-SiC and 6H-SiC are the far superior forms of SiC polytypes available commercially in both mass-produced bulk wafers and custom epitaxial layers. Therefore, only 4H-SiC and 6H-SiC material properties modeling will be explicitly considered in this chapter. A large number of experimental data reported in the literature have been evaluated and serve as the basis for the model development.

Subsections

• 3.1 Electronic Transport Model
  • 3.1.1 Basic Semiconductor Equations
  • 3.1.2 Drift-Diffusion Current Equations
  • 3.1.3 Hydrodynamic Transport Equations
  • 3.1.4 Lattice Heat Flow Equation
  • 3.1.5 Quasi-Fermi Potential
  • 3.1.6 Metal-Semiconductor Contacts
    • 3.1.6.1 Ohmic Contact
    • 3.1.6.2 Schottky Contact
    • 3.1.6.3 Polysilicon Contact
  • 3.1.7 Insulator-Metal Contact
  • 3.1.8 Semiconductor-Insulator Interface
  
  
• 3.2 Electronic Band Structure
  • 3.2.1 Bandgap-Energy
  • 3.2.2 Effective Masses and Intrinsic Carrier Density
  • 3.2.3 Bandgap Narrowing
  
  
• 3.3 Carrier Mobility
  • 3.3.1 Low-Field Carrier Mobility
  • 3.3.2 Mobility Degradation due to Scattering
  • 3.3.3 High-Field Mobility and Velocity Saturation
  
  
• 3.4 Dielectric and Thermal Properties
  • 3.4.1 Dielectric Permittivity
  • 3.4.2 Thermal Properties
  
  
• 3.5 Generation and Recombination
  • 3.5.1 Shockley-Read-Hall Recombination
  • 3.5.2 Auger Recombination
  • 3.5.3 Impact Ionization
  
  
• 3.6 Incomplete Ionization

T. Ayalew: SiC Semiconductor Devices Technology, Modeling, and Simulation