2. SiC Technology

Subsections

• 2.1 SiC Material Properties
  • 2.1.1 Crystallography
  • 2.1.2 Electrical Properties
  
  
• 2.2 SiC Device Applications
  • 2.2.1 High Temperature Device Operation
  • 2.2.2 High Power Device Operation
  • 2.2.3 High Frequency Device Operation
  • 2.2.4 Optoelectronic Device Operation
  
  
• 2.3 SiC Semiconductor Crystal Growth
  • 2.3.1 Historical Lack of Wafers
  • 2.3.2 Sublimation Growth of Wafers
    • 2.3.2.1 Commercially Available Wafers
    • 2.3.2.2 Wafer Crystal Defects
  • 2.3.3 Epitaxy
    • 2.3.3.1 Epitaxial Growth
    • 2.3.3.2 Homoepitaxial Growth
    • 2.3.3.3 Epilayer Doping
    • 2.3.3.4 Epilayer Crystal Defects
    • 2.3.3.5 Commercially Available Epilayers
  
  
• 2.4 SiC Device Fundamentals
  • 2.4.1 Choice of Polytype for Devices
  • 2.4.2 Selective Doping- Ion Implantation
  
  
• 2.5 SiC Contacts and Interconnect
  • 2.5.1 Ohmic Contacts
  • 2.5.2 Schottky Contacts
  
  
• 2.6 SiC Patterned Etching
• 2.7 SiC Insulators
• 2.8 SiC Device Packaging

T. Ayalew: SiC Semiconductor Devices Technology, Modeling, and Simulation