2DEG two-dimensional electron gas
ADC analog-digital converter
AFM atomic force microscopy
Al aluminium
AlGaN aluminium gallium nitride
AlInN aluminium indium nitride
AlN aluminium nitride
arPLS asymetrically reweighted penalized least-squares
BFoM Baliga’s figure of merit
BTI bias temperature instability
C carbon
CC configuration coordinate
CDF cumulative distribution function
CET capture emission time
DD drift-diffusion
DFT density functional theory
DG density gradient
DLTS deep level transient spectroscopy
EDMR electrically detected magnetic resonance
EM expectation maximization
EMF electromotive force
eMSM extended measure-stress-measure
ESR electron spin resonance
Fe iron
FET field-effect transistor
Ga gallium
GaAs gallium arsenide
GaN gallium nitride
H hydrogen
HCD hot-carrier degradation
HEMT high-electron-mobility transistor
HFET heterojunction field-effect transistor
HMM Hidden Markov Model
IGBT insulated gate bipolar transistor
In indium
InGaN indium gallium nitride
InN indium nitride
JFET junction field-effect transistor
JFoM Johnson’s figure of merit
LED light emitting diode
LOWESS locally weighted scatterplot smoothing
MAP maximum a-posteriori
Mg magnesium
MIS-HEMT metal-insulator-semiconductor HEMT
MOS metal-oxide-semiconductor
MoS2 molybdenum disulfide
MOSFET metal-oxide-semiconductor field-effect transistor
MSM measure-stress-measure
N nitrogen
NBTI negative bias temperature instability
NMP non-radiative multi-phonon
O oxygen
OTF on-the-fly
PBTI positive bias temperature instability
PDF probability density function
RMS root mean square
RTN random telegraph noise
Si silicon
SiC silicon carbide
SiGe silicon germanium
SILC stress induced leakage current
SiN silicon nitride
SiO2 silicon dioxide
SNR signal to noise ratio
STM scanning tunneling microscopy
TAT trap-assisted tunneling
TCAD technological computer aided design
TDDS time-dependent defect spectroscopy
TEM transmission electron microscopy
TMI TDDS measurement instrument
UID unintentionally doped
threshold voltage
WKB Wentzel–Kramers–Brillouin
