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Charge Trapping and Single-Defect Extraction in Gallium-Nitride Based MIS-HEMTs

List of Publications

Scientific Journals

  • [AGJ1] C. Ostermaier, P. W. Lagger, G. Prechtl, A. Grill, T. Grasser, and D. Pogany. “Dynamics of carrier transport via AlGaN barrier in AlGaN/GaN MIS-HEMTs”. In: Applied Physics Letters 110.17 (2017), p. 173502. doi: 10.1063/1.4982231.

  • [AGJ2] A. A. Makarov, S. E. Tyaginov, B. Kaczer, M. Jech, A. Chasin, A. Grill, G. Hellings, M. I. Vexler, D. Linten, and T. Grasser. “Analysis of the Features of Hot-Carrier Degradation in FinFETs”. In: Semiconductors 52.10 (2018), pp. 1298–1302. doi: 10.1134/S1063782618100081.

  • [AGJ3] M. Waltl, G. Rzepa, A. Grill, W. Gös, J. Franco, B. Kaczer, L. Witters, J. Mitard, N. Horiguchi, and T. Grasser. “Superior NBTI in High-k SiGe Transistors - Part I: Experimental”. In: IEEE Transactions on Electron Devices 64.5 (2017), pp. 2092–2098. doi: 10.1109/TED.2017.2686086.

  • [AGJ4] M. Waltl, G. Rzepa, A. Grill, W. Gös, J. Franco, B. Kaczer, L. Witters, J. Mitard, N. Horiguchi, and T. Grasser. “Superior NBTI in High-k SiGe Transistors - Part II: Theory”. In: IEEE Transactions on Electron Devices 64.5 (2017), pp. 2099–2105. doi: 10.1109/TED.2017.2686454.

  • [AGJ5] Y. Illarionov, G. Rzepa, M. Waltl, T. Knobloch, A. Grill, M. M. Furchi, T. Müller, and T. Grasser. “The Role of Charge Trapping in MoS2 /SiO2 and MoS2 /hBN Field-Effect Transistors”. In: 2D Materials 3.3 (2016), pp. 35004–35010. doi: 10.1088/2053-1583/3/3/035004.

  • [AGJ6] A. Grill, B. Stampfer, M. Waltl, K.-S. Im, J.-H. Lee, C. Ostermaier, H. Ceric, and T. Grasser. “Electrostatic Coupling and Identification of Single-Defects in GaN/AlGaN Fin-MIS-HEMTs”. In: Solid-State Electronics (submitted) (2018).

  • [AGJ7] B. Stampfer, F. Zhang, Y. Illarionov, T. Knobloch, P. Wu, M. Waltl, A. Grill, J. Appenzeller, and T. Grasser. “Characterization of Single Defects in Ultrascaled MoS2 Field-Effect Transistors”. In: ACS Nano 12.6 (2018), pp. 5368–5375. doi: 10.1021/acsnano.8b00268.

  • [AGJ8] R. Stradiotto, G. Pobegen, C. Ostermaier, M. Waltl, A. Grill, and T. Grasser. “Characterization of Interface Defects With Distributed Activation Energies in GaN-Based MIS-HEMTs”. In: IEEE Transactions on Electron Devices 64.3 (2017), pp. 1045–1052. doi: 10.1109/TED.2017.2655367.

  • [AGJ9] M. Reiche, M. Kittler, E. Pippel, H. Uebensee, H. Kosina, A. Grill, Z. Stanojevic, and O. Baumgartner. “Impact of Defect-Induced Strain on Device Properties”. In: Advanced Engineering Materials 18.12 (2016), pp. 1–4. doi: 10.1002/adem.201600736.

  • [AGJ10] M. Jech, B. Ullmann, G. Rzepa, S. Tyaginov, A. Grill, M. Waltl, D. Jabs, and C. Jungemann. “Impact of Mixed Negative Bias Temperature Instability and Hot Carrier Stress on MOSFET Characteristics - Part II: Theory”. In: IEEE Transactions on Electron Devices (2018), accepted for publication.

Conference Proceedings

  • [AGC1] A. Grill, G. Rzepa, P. Lagger, C. Ostermaier, H. Ceric, and T. Grasser. “Charge feedback mechanisms at forward threshold voltage stress in GaN/AlGaN HEMTs”. In: 2015 IEEE International Integrated Reliability Workshop. IEEE, 2015, pp. 41–45. doi: 10.1109/IIRW.2015.7437064.

  • [AGC2] A. Makarov, S. E. Tyaginov, B. Kaczer, M. Jech, A. Chasin, A. Grill, G. Hellings, M. Vexler, D. Linten, and T. Grasser. “Hot-Carrier Degradation in FinFETs: Modeling, Peculiarities, and Impact of Device Topology”. In: Proceedings of the 2017 International Electron Devices Meeting Technical Digest. talk: International Electron Devices Meeting (IEDM), San Francisco, CA, USA; 2017-12-02 – 2017-12-06. 2017, pp. 310–313. doi: 10.1109/IEDM.2017.8268381.

  • [AGC3] G. Rzepa, J. Franco, A. Subirats, M. Jech, A. Chasin, A. Grill, M. Waltl, T. Knobloch, B. Stampfer, T. Chiarella, N. Horiguchi, L. A. Ragnarsson, D. Linten, B. Kaczer, and T. Grasser. “Efficient Physical Defect Model Applied to PBTI in High-κ Stacks”. In: 2017 IEEE International Reliability Physics Symposium. 2017, XT-11.1–XT-11.6. doi: 10.1109/IRPS.2017.7936425.

  • [AGC4] M. Waltl, A. Grill, G. Rzepa, W. Gös, J. Franco, B. Kaczer, J. Mitard, and T. Grasser. “Nanoscale Evidence for the Superior Reliability of SiGe High-k pMOSFETs”. In: 2016 IEEE International Reliability Physics Symposium. 2016, XT-02-1–XT-02-6. doi: 10.1109/IRPS.2016.7574644.

  • [AGC5] A. Grill, B. Stampfer, M. Waltl, K.-S. Im, J.-H. Lee, C. Ostermaier, H. Ceric, and T. Grasser. “Characterization and modeling of single defects in GaN/AlGaN fin-MIS-HEMTs”. In: 2017 IEEE International Reliability Physics Symposium. IEEE, 2017, 3B-5.1–3B-5.5. doi: 10.1109/IRPS.2017.7936285.

  • [AGC6] O. Baumgartner, Z. Stanojevic, L. Filipovic, A. Grill, T. Grasser, H. Kosina, and M. Karner. “Investigation of Quantum Transport in Nanoscaled GaN High Electron Mobility Transistors”. In: Proceedings of the 19th International Conference on Simulation of Semiconductor Processes and Devices. 2014, pp. 117–120. doi: 10.1109/SISPAD.2014.6931577.

  • [AGC7] B. Ullmann, M. Jech, S. E. Tyaginov, M. Waltl, Y. Illarionov, A. Grill, K. Puschkarsky, H. Reisinger, and T. Grasser. “The Impact of Mixed Negative Bias Temperature Instability and Hot Carrier Stress on Single Oxide Defects”. In: 2017 IEEE International Reliability Physics Symposium. 2017, XT-10.1–XT-10.6. doi: 10.1109/IRPS.2017.7936424.

  • [AGC8] S. E. Tyaginov, M. Jech, G. Rzepa, A. Grill, A.-M. El-Sayed, G. Pobegen, A. Makarov, and T. Grasser. “Border Trap Based Modeling of SiC Transistor Transfer Characteristics”. In: 2018 IEEE International Integrated Reliability Workshop. 2018, accepted for publication.

Master Theses

  • [AGT1] B. Stampfer. “Trap Assisted Tunneling and Band Interaction using the Non-Radiative Multi Phonon Model”. Master Thesis (supervised by A. Grill and T. Grasser). Institute for Microelectronics, TU Wien, 2016.

  • [AGT2] A. Grill. “A framework for simulation and parameter optimization of a 90nm CMOS process in Sentaurus”. Master Thesis (supervised by K. Schweiger and H. Zimmermann). Institute for Circuit and Microwave Engineering, TU Wien, 2013.