Own Publications
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P1
P.HABAS:
Physics and Modeling in Concerning Hot-Carrier Degradation in MOSFETs,
In Proc: Conf. MIOPEL, Nis (YU), 1993 (invited).
P2
P.HABAS, O.HEINREICHSBERGER AND S.SELBERHERR:
Analysis of the Degradation of n-Channel LDD MOSFET's by
Numerical Simulation of the Charge-Pumping Current,
In Proc: ICSICT, pp.691-693, Beijing (China), 1992.
P3
P.HABAS AND J.FARICELLI:
Investigation of the Physical Modeling of the Gate-Depletion Effect,
IEEE Trans. Electron Devices, vol.39, pp.1496-1500, 1992.
P4
P.GRUBMAIR, #TEX2HTML_WRAP31230#, O.HEINREICHSBERGER,
H.KOSINA, C.SALA AND S.SELBERHERR:
Recent Advances in Device Simulation at the TU-Vienna,
In Proc: CAS, pp.347-358, Sinaia (Romania), 1992 (invited).
P5
P.HABAS, O.HEINREICHSBERGER AND S.SELBERHERR:
Transient Two-Dimensional Numerical Analysis of the Charge-Pumping Experiment,
In Proc: ESSDERC, pp.687-690, Leuven (Belgium), 1992.
P6
O.HEINREICHSBERGER, P.HABAS AND S.SELBERHERR:
Analysis of Geometric-Charge-Pumping Components in a Thin-Film SOI Device,
In Proc: ESSDERC, pp.819-822, Leuven (Belgium), 1992.
P7
P.HABAS AND S.SELBERHERR:
A Closed-Loop Extraction of the Spatial Distribution of Interface
Traps Based on Numerical Model of the Charge-Pumping Experiment,
In Proc: SSDM, pp.170-172, Tsukuba (Japan), 1992.
P8
P.HABAS, A.LUGBAUER AND S.SELBERHERR:
Two-Dimensional Numerical Modeling of Interband Tunneling Accounting
for Nonuniform Electric Field,
In Proc: NUPAD Conf., pp.135-140, Seattle (WA), 1992.
P9
P.HABAS AND S.SELBERHERR:
On the effect of non-degenerate doping of polysilicon gate in thin
oxide MOS-devices - Analytical Modeling,
Solid-State Electronics, vol.33, no.12, pp.1539-1544, 1990.
P10
P.HABAS AND S.SELBERHERR:
Impact of the Non-Degenerate Gate Effect on the Performance of
Submicron MOS-Devices,
Journal of MIDEM, no.4, pp.185-188, 1990.
P11
P.HABAS:
A Physics Based Analytical MOSFET Model with Accurate Field
Dependent Mobility,
Solid-State Electronics, vol.33, no.7, pp.923-933, 1990.
P12
P.HABAS AND S.SELBERHERR:
Numerical simulation of MOS-devices with non-degenerate gate,
In Proc: ESSDERC, pp.161-164, Nottingham (U.K.), 1990.
P13
P.HABAS:
A Physics Based MOS Transistor's Model in the Triode Regime
with Field-Dependent Mobility,
In Proc: ETAN Conf., Novi Sad (YU), 1989
(Best paper award in the Electron Devices and Materials Section).
P14
P.HABAS:
A SWS for industrial controller,
In Proc: Power Electronics Conf. EE-88,
Belgrade (YU), 1988.
P15
P.HABAS AND V.CVEKIC:
A Simple Interpretation of the Effect of High Drain Field in
Short-Channel MOSFET,
In Proc: SD-88, Nova Gorica (YU), 1988.
P16
P.HABAS, D.STOJANOVIC, R.RAMOVIC, D.STOJANOVIC AND
D.TJAPKIN:
Numerical simulation of power VDMOS transistor,
In Proc: ETAN Conf., Bled (YU), 1987.
P17
P.HABAS AND V.CVEKIC:
A model for the high-voltage MOS transistor in the saturation regime,
In Proc: MIEL-87 , Banjaluka (YU), 1987.
P18
P.HABAS:
Analysis and Design of a High-Frequency Switching Power Supply with
Power MOS Transistors,
In report for SIZNR APV, Suppl.7, pp.1-60, IEE - Faculty of Technical
Sciences, University of Novi Sad, 1986.
P19
P.HABAS:
The Buck Converter with Power MOS Transistor and Output
Capacitor Current Control,
In Proc: Power Electronics Conf. EE-86, pp.44-52,
Subotica (YU), 1986.
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Martin Stiftinger
Sat Oct 15 22:05:10 MET 1994