D I S S E R T A T I O N

Analysis of Physical Effects in
Small Silicon MOS Devices

ausgeführt zum Zwecke der Erlangung des akademischen Grades
eines Doktors der technischen Wissenschaften
eingereicht an der Technischen Universität Wien
Fakultät für Elektrotechnik

von

Predrag Habas

Girardigasse 1/2/31
A-1060 Wien
Matr. Nr. 8827937
geboren am 27.12.1962
in Vrbas, Srbija, Jugoslavija

Wien, im August 1993

Abstract
Kurzfassung
Acknowledgements
Contents
List of Symbols
1 Introduction
2 The Effect of Nondegenerate Gate on MOS Device Characteristics
- 2.1 Dual Gate CMOS Technology
- 2.2 Analytical Modeling of MOS Structures with Nondegenerate Gate
- 2.3 Experimental Results and Additional Physical Effects
  - 2.3.1 Comparison with Experimental Results
  - 2.3.2 Additional Physical Phenomena in Gate
    - Conclusion
- 2.4 Numerical Modeling and Evaluation of MOSFET Characteristics
3 Analytical and Numerical Investigation of the Charge Pumping
- 3.1 Introduction
- 3.2 Physical Model and Numerical Approach
- 3.3 Analytical Modeling of the Large-Signal Charge-Pumping Effect
  - 3.3.1 Rigorous Analysis of the Complete Characteristics Charge-Pumping Current versus Gate Top Level
  - 3.3.2 Emission in the Non-Steady-State Mode
- 3.4 Geometric Current Component and Other Non-Ideal Effects
  - 3.4.1 Minority Carriers Remaining in the Channel
  - 3.4.2 Carriers Emitted from the Interface States
- 3.5 Hot-Carrier Degradation Analysis
- 3.6 Conclusion
4 Analysis of Interband Tunneling in MOS Devices
- 4.1 Interband Tunneling in ULSI MOS Devices
- 4.2 Numerical Analysis of Interband Tunneling in MOSFETs
  - Two-Dimensional Numerical Approach
  - The Potential and Field Distributions in the Critical Area
5 Summary
- Contributions
Appendix A: Derivations, Expressions and Approximations in Gate Modeling
- Carrier Concentrations:
- Solution of the Poisson Equation for Fermi-Dirac Statistics:
- Solution of the Poisson Equation for Maxwell-Boltzmann Statistics:
- Semiconductor Capacitance in Cases of FD and MB Statistics:
- Onset of Inversion for FD Statistics:
- Approximations to the Fermi Integrals and their Inverse:
- Model of the Band-gap Narrowing:
Appendix B: Discretization Error in the Trap Equation: An Analysis
Appendix C: Selfconsistent Coupling of the Trap Equations with the Basic Semiconductor Equations
Appendix D: Charge-Pumping Signals in MOSFETs
Appendix E: Analytical Modeling of the Gate-Corner/LDD-Region Electrical-Field Fringing Effect
Appendix F: Theoretical Consideration of the Potential Perturbation Induced by Localized Surface Charge
- F.1 Local Potential Perturbation
- F.2 Gate-Bias Shift
Appendix G: Relations for the Lateral Profiling of Interface States and Fixed Oxide Charge by the Charge Pumping
- G.1 Interface Trap Spatial Distribution
- G.2 Filtering and Differentiation of Numerical Results
- G.3 Fixed Oxide Charge Spatial Distribution
Appendix H: Direct Tunneling Rate in Spatially Variable Fields
References
Own Publications
Curriculum Vitae
About this document ...

Martin Stiftinger
Sat Oct 15 22:05:10 MET 1994

D I S S E R T A T I O N

Analysis of Physical Effects in Small Silicon MOS Devices

ausgeführt zum Zwecke der Erlangung des akademischen Grades eines Doktors der technischen Wissenschaften eingereicht an der Technischen Universität Wien Fakultät für Elektrotechnik

Predrag Habas

Wien, im August 1993

Analysis of Physical Effects in
Small Silicon MOS Devices

ausgeführt zum Zwecke der Erlangung des akademischen Grades
eines Doktors der technischen Wissenschaften
eingereicht an der Technischen Universität Wien
Fakultät für Elektrotechnik