6.3.4 Oxide Thickness Scaling

Due to the relatively low ΔID ∕ID,0   degradation for tox = 5.0nm  resulting from the low-voltage stress conditions studied here (small Eox   ), noise seriously limits the accuracy. Nonetheless, good scalability for different tox   devices (1.8nm  , 2.2nm  , and 5.0nm  ) can be obtained (Fig. 6.12 (top)).


PIC


Figure 6.12: ΔID ∕ID,0   for different oxide thicknesses (1.8nm  , 2.2nm  , and 5.0nm  ) can be scaled as well. Only the thick device is affected by noise due to the low degradation. The graph at the very bottom combines the three dependencies.