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6. Differential Method

As outlined in the previous chapter a rigorous calculation of the EM field becomes necessary to cope with the phenomena that determine the performance of today's semiconductor photolithography. Difficulties arise from the EM scattering caused by the inhomogeneous resist and by the increasingly nonplanar topography as well as the oblique wave propagation due to the usage of high numerical apertures. We chose the differential method among the various rigorous techniques described in Section 5.3. The major reasons for this choice are listed below by summarizing some important advantages of the differential method in comparison to the other three available rigorous techniques (cf. Table 5.1):

As for the outline of this chapter: In Section 6.1 we first pose the problem formulation and then briefly sketch the operation principle of the differential method. In Section 6.2 the lateral discretization of the Maxwell equations is discussed in great detail. Especially the compact matrix notation introduced significantly simplifies all further investigations. Next, in Section 6.3 the BCs are formulated. As they are posed at two different spatial locations, i.e., at the two boundary points of the simulation interval, a two-point BVP of ODEs has to be solved. Important solution algorithms for BVPs are summarized in Section 6.4, whereby the ``shooting method'' is best suited for our application since it can be implemented in a very memory-efficient way. Its theoretical background and implementation is thus discussed at greater length. The final Section 6.5 is devoted to the performance and limitation of the differential method as well as to a comparison of differential and waveguide methods.



 
next up previous contents
Next: 6.1 Fundamentals Up: PhD Thesis Heinrich Kirchauer Previous: 5.3.2 Approximate Electromagnetic Solution
Heinrich Kirchauer, Institute for Microelectronics, TU Vienna
1998-04-17