4. Examples

Although many analysis tasks for contemporary devices can be performed using two-dimensional simulation there exist several advanced device structures which need full three-dimensional simulation for the prediction of the device behavior. Some of these devices have been studied using the three-dimensional device simulator Minimos-NT, namely the superjunction lateral diffused MOSFET, the magnetic field sensitive MOSFET, a silicon on insulator MOSFET, and the FinFET.