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Abkürzungen  


ADP              akustisches Deformationspotential 
APD 		 ``avalanche photodiode'' 
BGN 		 ``band gap narrowing'' 
BH 		 Brooks-Herring 
BZ 		 Brillouinzone 
CVD 		 ``chemical vapor deposition'' 
DD 		 Drift-Diffusion 
DH 		 ``double heterojunction''
DOS 		 ``density of states'' 
DX 		 ``donor complex'' 
EMA 		 ``effective mass approximation'' 
EMC 		 Ensemble Monte Carlo 
HBT 		 Heterostruktur-Bipolartransistor 
HD 		 hydrodynamisch 
HFET 		 Heterostruktur-Feldeffekttransistor 
HEMT 		 ``high electron mobility transistor'' 
HL 		 Halbleiter 
LPE 		 ``liquid phase epitaxy'' 
LB 		 Leitungsband 
MB 		 Matthews-Blakeslee 
MBE 		 ``molecular beam epitaxy'' 
MC 		 Monte Carlo 
MOCVD 		 ``metal-organic chemical vapor deposition'' 
MODFET 		 ``modulation-doped field effect transistor'' 
ODP 		 optisches Deformationspotential 
PO 		 polar-optische Phononen 
PPC 		 ``persistent photoconductivity'' 
SCIC 		 ``self-consistent interface calculation'' 
SH 		 ``single heterojunction'' 
VB 		 Valenzband 
VPE 		 ``vapor phase epitaxy'' 



Christian Koepf
1997-11-11