The roughness of interfaces in a heterostructure leads to spatial fluctuations of the well width, and consequently to fluctuations of the energy levels. These fluctuations of the energy levels act as a fluctuating potential for the motion of confined carriers [89]. A distribution of terraces is present at the interfaces and the electrons are scattered elastically by them [90].
The randomness of the interface is described by a correlation function at the in-plane position x∥= (x, y), which is usually taken to be Gaussian with a characteristic height of the roughness Δ, and a correlation length Λ representing a length scale for fluctuations of the roughness along the interface [91], such that
| (5.32) |
The perturbation in the potential V (z) due to a position shift Δ(x∥) is given by
| (5.33) |
For the I-th interface, which is centered about the plane zI and extends over the range [zL,I,zR,I], the scattering matrix element can be defined as
| (5.35) |
and the rectangular function reads
The expectation value of the square of the matrix element is given by
| (5.36) |
Making use of eq. (5.32) and Fermi’s Golden Rule, the interface roughness induced scattering rates are given by [92]