The goal of this optimization is to find a scalable analytical doping
profile. It has to be consistent with the results of the process
simulation, valid for several gate lengths, and match the electrical
data measured from the test-wafers.
Figure 5.13:
Structure of the first part of the inverse modeling task.
Figure 5.14:
Structure of the second part of the inverse modeling task.
![\includegraphics[width=\linewidth]{graphics/appc_struct1.eps}](img242.gif)
![\includegraphics[width=\linewidth]{graphics/appc_struct2.eps}](img243.gif)