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A. Abramo, L. Selmi, Z. Yu, and R. W. Dutton, ``Well-Tempered MOSFETs: 1D
versus 2D Quantum Analysis,'' in Proc. Intl. Conf. on Simulation of
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S. Adachi, ``GaAs, AlAs, and AlGaAs Material Parameters for Use
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S. Adachi, Physical Properties of III-V Semiconductor Compounds.
New York: John Wiley& Sons, 1992.
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S. Adachi, ed., Properties of Aluminum Gallium Arsenide.
No. 7 in EMIS Datareviews Series, IEE INSPEC, 1993.
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I. Adesida, A. Mahajan, G. Cueva, and P. Fay, ``Novel HEMT Processing
Technologies and their Circuit Applications,'' Solid-State Electron.,
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Agilent Technologies, Palo Alto, CA, IC-CAP 5.3 Reference, 2000.
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R. K. Ahrenkiel, ``Minority-Carrier Lifetime of III-V Compound
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R. K. Ahrenkiel and D. J. Dunlavy, ``Minority Carrier Lifetime in
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I. Akasaki and H. Amano, ``Crystal Structure, Mechanical Properties and Thermal
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S. T. Allen, W. L. Pribble, R. A. Sadler, T. S. Alcorn, Z. Ring, and J. W.
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R. Alm, ``Integration of GaAs MMIC Technology in Commercial MM-Wave SATCOM and
LMDS Transceivers,'' in Intl. Conf. on Gallium Arsenide Manufacturing
Technology (MANTECH), (Washington D.C.), pp. 53-56, 2000.
- 12
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O. Ambacher, B. Foutz, J. Smart, J. R. Shealy, N. G. Weimann, K. Chu,
M. Murphy, A. Sierakowski, W. J. Schaff, and L. Eastman, ``Two Dimensional
Electron Gases Induced by Spontaneous and Piezoelectric Polarization in
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R. Anholt, ``Dependence of GaAs Fringe Capacitances on the Fabrication
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R. Anholt, ``Drain Barrier Lowering in HEMTs,'' in Proc. GaAs-IC Symp.,
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R. Anholt, ``Simulating AlGaN/GaN HEMTs using G-PISCES-2B and PETs,'' tech.
rep., Gateway Modeling Inc., Minneapolis, February 2000.
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- 16
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A. F. M. Anwar and R. T. Webster, ``On the Possible Effects of AlGaAsSb Growth
Parameters on the 2-DEG Concentration in AlGaAsSb/InGaAs/AlGaAsSb QW's,''
IEEE Trans. Electron Devices, vol. 45, no. 6, pp. 1170-1175, 1998.
- 17
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A. F. M. Anwar, S. Wu, and R. T. Webster, ``Temperature Dependent Transport
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- 18
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M. Arps, H. G. Bach, W. Passenberg, A. Umbach, and W. Schlaak, ``Influence of
SiN Passivation on the Surface Potential of GaInAs and AlInAs in HEMT
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(Schwäbisch Gmünd), pp. 308-311, 1996.
- 19
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U. Auer, W. Prost, W. Brockerhoff, and F. J. Tegude, ``A Consistent Physical
Model For The Gate-Leakage and Breakdown in InAlAs/InGaAs HFETs,'' in Proc. Intl. Conf. InP and Related Materials, (Davos), pp. 439-442, 1999.
- 20
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U. Auer, R. Reuter, P. Ellrodt, W. Prost, and F. J. Tegude, ``Characterization
and Analysis of a New Gate Leakage Mechanism at High Drain Bias in
InAlAs/InGaAs Heterostructure Field-Effect Transistors,'' in Proc. Intl.
Conf. InP and Related Materials, (Schwäbisch Gmünd), pp. 650-653, 1996.
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Avant! Cooperation, Freemont, CA, Medici, Two-Dimensional Device
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K. Backhaus, B. Erichson, W. Plinke, and R. Weiber, Multivariate
Analysemethoden (in German).
Berlin: Springer, 1996.
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Y. Baeyens, Monolithic Microwave Integrated Circuits Using GaAs and InP
Based Heterojunction Field-Effect Transistors.
Phd thesis, Katholieke Universiteit Leuven, 1996.
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Y. Baeyens, R. Pullella, C. Dorschky, J. P. Mattia, R. Kopf, H. S. Tsai,
G. Gergiou, R. Hamm, Y. C. Wang, Q. Lee, and Y. K. Chen, ``Compact
Differential InP-Based VCOs with Wide Tuning Range at W-band,'' in IEEE
MTT-S Intl. Microwave Symp. Dig., (Boston), pp. 349-352, 2000.
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S. R. Bahl, J. A. del Alamo, J. Dickmann, and S. Schildberg, ``Off-State
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G. A. Baraff, ``Distribution Functions and Ionization Rates for Hot Electrons
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A. R. Barnes, D. C. Bannister, and M. T. Moore, ``A 44 GHz Low Noise Block
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W. Batty, C. E. Christoffersen, S. David, A. J. Panks, R. G. Johnson, C. M.
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R. Bauknecht and H. Melchior, ``InP/InGaAs Double HBTs with High CW Power
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C. Bea, Charakterisierung und Modellierung des 1/f Rauschverhaltens von
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S. Beebe, F. Rotella, Z. Sahul, D. Yergeau, G. McKenna, L. So, Z. Yu, K. C. Wu,
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W. Beinstingl, R. Christanell, J. Smoliner, C. Wirner, E. Gornik, G. Weimann,
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F. Benkhelifa, M. Chertouk, M. Dammann, H. Massler, M. Walther, and G. Weimann,
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O. Berger, ``10 Years Production Using the GaAs MESFET DIOM Process,'' in Intl. Conf. on Gallium Arsenide Manufacturing Technology (MANTECH),
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J. P. Bergman, C. Hallin, and E. Janzen, ``Temperature Dependence of the
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A. Bessemoulin, H. Massler, A. Hülsmann, and M. Schlechtweg, ``1-Watt Ka-band
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P. Bhattacharya, ed., Properties of Lattice-Matched and Strained Indium
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P. Bhattacharya, ed., Semiconductor Optoelectronic Devices.
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J. Blakesmore, Gallium Arsenide.
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R. R. Blanchard, A. Cornet, and J. A. del Alamo, ``Titanium Hydride Formation
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K. Bock, L. Hartnagel, and J. Dumas, ``Surface-Induced Electromigration in GaAs
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H. Brech, Optimization of GaAs Based High Electron Mobility Transistors by
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G. E. Bulman, V. M. Robbins, K. F. Brennan, K. Hess, and G. Stillman,
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M. Chertouk, F. Steinhagen, H. Massler, M. Dammann, W. H. Haydl, K. Köhler,
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W. Y. Chou, G. S. Chang, W. C. Hwang, and J. S. Hwang, ``Analysis of Fermi
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F. Crabbe, B. S. Meyerson, J. M. C. Stork, and D. L. Harame, ``Vertical Profile
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C.Troger, Modellierung von Quantisierungseffekten in
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M. Dammann, M. Chertouk, W. Jantz, K. Köhler, K. H. Schmitt, and G. Weimann,
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