The band gap is the most important parameter for the description
of semiconductors. It is modeled as a function of lattice temperature according to:
|
The significant scatter for the bowing parameter in AlGaN was resolved in [303]
for 0.16 and is attributed to a systematic discrepancy of the two experimental methods
applied. From this data a specific
(first)-valley value for the bowing parameter was
obtained. Data from [255] were evaluated in a one valley model for a consistent description
of the cross over transition, as shown in Fig. 3.2. For In
Ga
N, as a first
approach, the strained data were compiled into the model for
0.15.