3.1 SiGe Strained Layers

SiGe active layers are used to create advanced semiconductor devices. These layers must be sufficiently thin to avoid generation of dislocations which will negatively affect transport properties of the devices.
Subsections

3.1.1 Critical Thickness and Dislocations
3.1.2 Applications of Strain
3.1.3 Strained Layers in Semiconductor Devices
- 3.1.3.1 Modulation-Doped FET
- 3.1.3.2 Strained MOSFET

S. Smirnov:


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