Previous:
2.5.5.5 Ridley's Model
Up:
Dissertation Sergey Smirnov
Next:
3.1 SiGe Strained Layers
3
. Strain Effects in
Grown on a
Substrate
Subsections
3
.
1
SiGe Strained Layers
3
.
1
.
1
Critical Thickness and Dislocations
3
.
1
.
2
Applications of Strain
3
.
1
.
3
Strained Layers in Semiconductor Devices
3
.
1
.
3
.
1
Modulation-Doped FET
3
.
1
.
3
.
2
Strained MOSFET
3
.
2
Linear Deformation-Potential Theory
3
.
2
.
1
General Description of the Conduction Band Splitting in Strained SiGe
3
.
2
.
2
Strain Tensor
3
.
2
.
3
Stress Tensor
3
.
2
.
4
Energy Shift
3
.
2
.
4
.
1
Shift of Conduction Band Minima
3
.
2
.
4
.
2
Shift of the Mean Energy
3
.
3
Substrate Orientation and Strain Tensor
3
.
3
.
1
Strain Tensor in the Interface Coordinate System
3
.
3
.
2
Coordinate System Transformation
3
.
3
.
2
.
1
Euler's Angles
3
.
3
.
2
.
2
Transformation Operator
3
.
3
.
2
.
3
Tensor Transformations
3
.
3
.
3
Strain Tensor Elements in the Principle Coordinate System
3
.
4
Band Structure of Strained SiGe layers
3
.
4
.
1
Hydrostatic Strain
3
.
4
.
2
Uniaxial Strain
3
.
4
.
2
.
1
Splitting of the X Valleys
3
.
4
.
2
.
2
Splitting of the L Valleys
3
.
4
.
3
Effective Masses in Strained SiGe
3
.
5
Scattering Mechanisms in Strained SiGe
3
.
5
.
1
Electron-Phonon Scattering
3
.
5
.
2
Ionized Impurity Scattering
3
.
5
.
3
Plasmon Scattering
 
Previous:
2.5.5.5 Ridley's Model
Up:
Dissertation Sergey Smirnov
Next:
3.1 SiGe Strained Layers
S. Smirnov: