3.1 Device Description

The description of the device includes the device geometry and the doping profile. As the main interest of this work lies within finding optimal doping profiles in the channel and bulk region of a MOS transistor, a realistic device geometry has been chosen and is kept fixed during optimization. The source and drain doping profiles were excluded from optimization for the same reason. The two different methods for defining the bulk doping profile follow the two-stage approach.

The optimizations are performed on two different device generations referred to as ``Device Generation A'' and ``Device Generation B'', respectively. Table 3.1 lists the key technology parameters of these two devices.

Table 3.1: The two device generations used for optimization.

Device Generation	gate length	gate oxide thickness	supply voltage
A	0.25 $\mu$m	5.0 nm	1.5 V
B	0.10 $\mu$m	2.5 nm	0.9 V