This chapter presents different kinds of examples which were simulated with the small-signal capabilities of MINIMOS-NT. First, results of an InGaP/GaAs HBT are presented, followed by a SiGe-HBT. The features have also been employed for investigating a wide-bandgap SiC MESFET. In order to apply the new mixed-mode AC capabilities, three mixed-mode examples have been simulated. The successful transient simulation of an amplifier is followed by a small-signal simulation of the amplifier extended by a resonant circuit. By feeding back the output of the resonant circuit to the input of the amplifier a Colpitts oscillator is set up, which is then again subject to a transient simulation. Finally, results of the simulation of double-gate MOSFETs are compared regarding the drift-diffusion and higher-order transport models. All simulation results are compared either with measurements or with reference results of other simulators.