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This example demonstrates the implemented mixed-mode AC features on the simulation of a Colpitts oscillator and two intermediate circuits. The following three circuits are simulated by means of transient and small-signal device/circuit simulation:
The amplifier circuit is a combination of the core and the AC source
subcircuits as well as of load elements. The transistor used in the core
subcircuit is a
SiGe-HBT device structure
obtained by process simulation [110]. The structure was thoroughly
investigated by steady-state and small-signal AC simulations
[233] as presented in Section 6.2.
CircuitAmplifier { Vsrc : ~SubCircuits.Vsrc { in = "pin1"; } Core : ~SubCircuits.Core { in = "pin1"; out = "pin2"; } CL : ~Devices.C { N1 = "pin2"; N2 = "pin3"; C = 1 nF; } RL : ~Devices.R { N1 = "pin3"; N2 = "gnd"; R = 1e3; } }
All simulations use the mixed-mode iteration scheme (see Section 3.6.4). In
the first block the fixed node voltages apply static boundary conditions at the
transistor terminals in order to improve convergence to an initial solution
useful for the subsequent circuit simulations. In this case, the three fixed
node voltages (
2.0
V,
1.2
V, and
0.4
V) represent the dimensioning of the circuit in respect
to the chosen operating point. Transient simulation results are shown in
Figure 6.11. The linear equation system has a dimension of 11,601 and
the simulator requires between 1.0 and 2.9
s per time step on a
2.4
GHz Intel Pentium IV with
1
GB memory running under Suse Linux 8.2.
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The second example circuit consists of all three subcircuits, since the
resonant circuit is now coupled to the output of the amplifier. The resonant
circuit is configured for an oscillation frequency of 10GHz. This can be
confirmed by results of a small-signal simulation as shown in Figure 6.12
(
1
mV). In average, MINIMOS-NT requires 8.5
s per frequency
step. With a VBIC95 compact model of a similar transistor, the circuit
simulator was used to obtain data from the same
circuit.
CircuitResonant { Core : ~BaseCircuits.Core { in = "pin8"; out = "pin4"; } Vsrc : ~BaseCircuits.Vsrc { in = "pin8"; } LC : ~BaseCircuits.LC { in = "pin4"; out = "pin9"; } R5 : ~Devices.R { N1 = "pin9"; N2 = "gnd"; R = 1e3; } }
Finally, a Colpitts oscillator circuit is built by feeding back the output of the resonant circuits to the input of the core circuit (amplifier).
CircuitOscillator { Core : ~SubCircuits.Core { in = "pin1"; out = "pin2"; } LC : ~SubCircuits.LC { in = "pin2"; out = "pin1"; } }
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At turn on, random noise is generated within the active device, which is here
the SiGe bipolar junction transistor, and then amplified. This noise is
positively fed back through the frequency selective circuit (resonant circuit
consisting of an inductor and two capacitors) to the input, where it is
amplified again. After the initial phase, a state of equilibrium is reached,
where the losses are compensated by the power supply. The amount of feedback to
sustain oscillation is basically determined by the
ratio.
Transient simulation results are shown in Figure 6.13. In the simulator,
the random noise of the active device is replaced by a numerical noise caused
by the restricted representation of floating point numbers. The simulator
requires 0.4s in the initial phase and between 1.9
s and 2.9
s in the
state of equilibrium per time step.