Erasmus Langer
Siegfried Selberherr
Abel Barrientos
Oskar Baumgartner
Hajdin Ceric
Johann Cervenka
Otmar Ertl
Lado Filipovic
Wolfgang Gös
Klaus-Tibor Grasser
Philipp Hehenberger
René Heinzl
Hans Kosina
Alexander Makarov
Goran Milovanovic
Mihail Nedjalkov
Neophytos Neophytou
Roberto Orio
Vassil Palankovski
Mahdi Pourfath
Karl Rupp
Franz Schanovsky
Zlatan Stanojevic
Ivan Starkov
Franz Stimpfl
Viktor Sverdlov
Stanislav Tyaginov
Stanislav Vitanov
Paul-Jürgen Wagner
Thomas Windbacher

Goran Milovanovic
Dipl.-Ing.
milovanovic(!at)iue.tuwien.ac.at
Biography:
Goran Milovanovic was born in Tulln, Austria, in 1981. He studied physics at the Technische Universität Wien, where he received the degree of Diplomingenieur in November 2005. He joined the Institute for Microelectronics in April 2007, where he is currently working on his doctoral degree. His research interests include device modeling and the simulation of strained Si CMOS transistors.

Monte Carlo Simulation of Quantum Cascade Lasers

The suggestion to use intersubband transitions in order to create a laser was first made by Kazarinov and Suris. Over the past several years, Quantum Cascade Lasers (QCL) have proved to be very promising candidates for practical sources of radiation, particularly in the mid-infrared region. QCLs are complex devices, whose core is a MultiQuantum-Well (MQW) structure made up of repeated stages of active regions sandwiched between electron injecting and collecting regions. When a proper bias is applied, an electron cascade along the subsequent quantized-level energy staircase takes place. The Boltzmann-like structure of the fully kinetic description allows for a stochastic solution, namely the commonly used Monte Carlo method. We created a comprehensive Monte Carlo simulation of electron transport incorporating all three valley states in GaAs-based quantum cascade lasers. All relevant acoustic and polar optical electron-phonon, as well as intervalley scattering mechanisms, are included.
The electron states corresponding to a single QCL stage are evaluated within a selfconsistent Schrödinger-Poisson solver. Given such carrier states, we consider the ideal MQW structure obtained as infinite repetition of this QCL periodicity region. The evolution of the carrier distribution is governed by the Boltzmann-like equation. The interstage scattering is limited to nearest neighbor only. The carrier transport is simulated over the central stage and every time a carrier proceeds an interstage scattering process the electron is reinjected into the central region and the corresponding electron charge contributes to the current through the device.


Flowchart of the Monte Carlo simulation.


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