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1. Introduction
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Peter Fleischmann's Dissertation
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Acknowledgement
Contents
Contents
1. Introduction
1.1 Outline of the Thesis
1.2 Terminology
2. Challenge and Demands
2.1 CAD
2.2 Semiconductor Process and Device Simulation
2.3 State of the Art
3. Mesh Generation
3.1 Geometrical Mesh Quality
3.2 Finite Volumes and Finite Elements
3.2.1 Requirements for Finite Volume Meshes
3.2.2 Requirements for Finite Element Meshes
3.2.3 Simple, Distinctive Mesh Examples
3.3 Control Space
3.4 Local Adaptation
3.4.1 Moving Boundaries
3.4.2 Hierarchical Meshes
3.4.3 Bisection and Projection
3.4.4 Red-Green Refinement
3.4.5 Full Freedom Point Insertion and Removal
3.4.6 Mesh Smoothing
3.4.7 Local Transformations
3.5 Surface Mesh
3.5.1 Surface Extraction From Cellular Data
3.5.2 Surface Coarsening, Data Reduction
3.5.3 Surface Smoothing
3.6 Point Placement
4. Methodologies
4.1 Structured Grid Generation
4.1.1 Algebraic Method
4.1.2 PDE Method
4.2 Product Methods
4.2.1 Layer-Based Method
4.3 Cartesian and Octree Methods
4.4 Advancing Front Methods
4.5 Delaunay Methods
5. Delaunay Triangulation
5.1 Tetrahedralization of a Point Set
5.2 Definition and Delaunay Properties
5.3 Algorithms for Constructing a Delaunay Triangulation
5.3.1 Divide-and-Conquer
5.3.2 Sweepline
5.3.3 Incremental Construction
5.3.4 Incremental Search
5.3.5 Convex Hull
5.4 Non-Uniqueness
5.5 Boundary Integrity
5.5.1 Constrained Delaunay Triangulation
5.5.2 Conforming Delaunay Triangulation
5.6 Steiner Points and Steiner Triangulation
5.7 Delaunay Slivers
6. Architecture and Implementation
6.1 Meshing Strategy and Overall Concept
6.2 Initial Point Generation
6.3 Surface Triangulation
6.4 Volume Tetrahedralization
6.4.1 Algorithm Overview
6.4.2 Point Location
6.4.3 Degenerate Point Sets
6.5 Local Adaptation
7. Examples
7.1 CAD
7.2 Interconnects
7.3 Chemical Vapor Deposition and Reaction Kinetics
7.4 NMOS Transistor
7.5 CMOS Inverter
8. Outlook
Bibliography
List of Figures
Peter Fleischmann
2000-01-20
