BTI bias temperature instability
NBTI negative bias temperature instability
PBTI positive bias temperature instability
HCD hot–carrier degradation
TDDB time dependent dielectric breakdown
CMOS complementary metal–oxide–semiconductor
VLSI very large–scale integrated
NMP nonradiative multiphonon
PES potential energy surface
PEC potential energy curve
RC reaction coordinate
MEP minimum energy path
MECP minimum energy crossing point
NEB nudged elastic band
CI–NEB climbing–image nudged elastic band
BOA Born–Oppenheimer approximation
TST transition state theory
TS transitions state
FGR Fermi’s Golden Rule
FCP Franck–Condon principle
LSF lineshape function
WKB Wentzel–Kramers–Brillouin
TCAD technology computer–aided design
MOSFET metal–oxide–semiconductor field–effect transistor
VB valence band
CB conduction band
EDF energy distribution function
TDDS time–dependent defect spectroscopy
OV oxygen vacancy
HB hydrogen bridge
HE
FPT first passage time
FD Fermi–Dirac
BTE Boltzmann transport equation
II impact ionization
DD drift–diffusion
eMSM extended Measure–Stress–Measure
DFT density functional theory
CDFT constrained density functional theory
SP single particle
MP multiple particle
STM scanning tunneling microscope
DB dangling bond
ESR electron spin resonance
DOS density of states
MD molecular dynamics
BC bond–center
AB antibonding
WTMD well–tempered metadynamics
CV collective variable
FES free energy landscape
MO molecular orbital
DOF degrees of freedom
LUMO lowest unoccupied molecular orbital
HOMO highest occupied molecular orbital
