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[MJJ1] Y. Illarionov, T. Knobloch, M. Jech, M. Lanza, D. Akinwande, M. I. Vexler, T. Müller, M. Lemme, G. Fiori, F. Schwierz, and T. Grasser. “Insulators
for 2D Nanoelectronics: The Gap to Bridge”. In: Nature Communications 11 (2020), p. 3385. doi: 10.1038/s41467-020-16640-8.
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[MJJ2] M. Jech, G. Rott, H. Reisinger, S. Tyaginov, G. Rzepa, A. Grill, D. Jabs, C. Jungemann, M. Waltl, and T. Grasser. “Mixed Hot-Carrier/Bias Temperature Instability
Degradation Regimes in Full VG , VD Bias Space: Implications and Peculiarities”. In: IEEE Transactions on Electron Devices 67.8 (2020), pp. 3315–3322. doi: 10.1109/TED.2020.3000749.
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[MJJ3] M. Jech, A.-M. El-Sayed, S. Tyaginov, A. L. Shluger, and T. Grasser. “Ab Initio Treatment of Silicon-Hydrogen Bond Rupture at Si/SiO2 Interfaces”. In: Phys. Rev.
B 100 (19 2019), p. 195302. doi: 10.1103/PhysRevB.100.195302.
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[MJJ4] M. Jech, B. Ullmann, G. Rzepa, S. E. Tyaginov, A. Grill, M. Waltl, D. Jabs, C. Jungemann, and T. Grasser. “Impact of Mixed Negative Bias Temperature Instability and
Hot Carrier Stress on MOSFET Characteristics-Part II: Theory”. In: IEEE Transactions on Electron Devices 66.1 (2019), pp. 241–248. doi: 10.1109/TED.2018.2873421.
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[MJJ5] A. Makarov, B. Kaczer, A. Chasin, M. Vandemaele, E. Bury, M. Jech, A. Grill, G. Hellings, A.-M. El-Sayed, T. Grasser, D. Linten, and S. E. Tyaginov. “Bi-Modal
Variability of nFinFET Characteristics During Hot-Carrier Stress: A Modeling Approach”. In: IEEE Electron Device Letters 40.10 (2019), pp. 1579–1582. doi: 10.1109/LED.2019.2933729.
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[MJJ6] B. Ullmann, M. Jech, K. Puschkarsky, G. A. Rott, M. Waltl, Y. Illarionov, H. Reisinger, and T. Grasser. “Impact of Mixed Negative Bias Temperature Instability and Hot
Carrier Stress on MOSFET Characteristics-Part I: Experimental”. In: IEEE Transactions on Electron Devices 66.1 (2019), pp. 232–240. doi: 10.1109/TED.2018.2873419.
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[MJJ7] W. Gös, Y. Wimmer, A.-M. El-Sayed, G. Rzepa, M. Jech, A. L. Shluger, and T. Grasser. “Identification of Oxide Defects in Semiconductor Devices: A Systematic
Approach Linking DFT to Rate Equations and Experimental Evidence”. In: Microelectronics Reliability 87 (2018), pp. 286–320. doi: 10.1016/j.microrel.2017.12.021.
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[MJJ8] G. Rzepa, J. Franco, B. J. O’Sullivan, A. Subirats, M. Simicic, G. Hellings, P. Weckx, M. Jech, T. Knobloch, M. Waltl, P. J. Roussel, D. Linten, B. Kaczer, and T. Grasser.
“Comphy – A Compact-Physics Framework for Unified Modeling of BTI”. In: Microelectronics Reliability 85.1 (2018), pp. 49–65. doi: 10.1016/j.microrel.2018.04.002.
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[MJJ9] B. Kaczer, J. Franco, S. E. Tyaginov, M. Jech, G. Rzepa, T. Grasser, B. J. O’Sullivan, R. Ritzenhaler, T. Schram, A. Spessot, D. Linten, and N. Horiguchi. “Mapping of
CMOS FET Degradation in Bias Space–Application to Dram Peripheral Devices”. In: Journal of Vacuum Science & Technology B 35.1 (2017), 01A109-1–01A109-6. doi: 10.1116/1.4972872.
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[MJJ10] M. Jech, P. Sharma, S. E. Tyaginov, F. Rudolf, and T. Grasser. “On the Limits of Applicability of Drift-Diffusion Based Hot Carrier Degradation Modeling”. In:
Japanese Journal of Applied Physics 55.4S (2016), pp. 1–6. doi: 10.7567/JJAP.55.04ED14.
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[MJJ11] P. Sharma, S. E. Tyaginov, M. Jech, Y. Wimmer, F. Rudolf, H. Enichlmair, J. Park, H. Ceric, and T. Grasser. “The Role of Cold Carriers and the Multiple-Carrier
Process of Si-H Bond Dissociation for Hot-Carrier Degradation in n- and p-channel LDMOS Devices”. In: Solid-State Electronics 115.Part B (2016), pp. 185–191. doi: 10.1016/j.sse.2015.08.014.
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[MJJ12] S. Tyaginov, M. Jech, J. Franco, P. Sharma, B. Kaczer, and T. Grasser. “Understanding and Modeling the Temperature Behavior of Hot-Carrier Degradation in SiON
nMOSFETs”. In: IEEE Electron Device Letters 37.1 (2016), pp. 84–87. doi: 10.1109/LED.2015.2503920.
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[MJC1] J. Franco, J.-F. de Marneffe, A. Vandooren, Y. Kimura, L. Nyns, Z. Wu, A.-M. El-Sayed, M. Jech, D. Waldhoer, D. Claes, H. Arimura, L.-A. Ragnarsson, V. Afanas’ev,
A. Stesmans, N. Horiguchi, D. Linten, T. Grasser, and B. Kaczer. “Atomic Hydrogen Exposureto Enable High–Quality Low–Temperature SiO2 with Excellent pMOS NBTI Reliability Compatible with 3D Sequential Tier Stacking”.
In: 2020 IEEE International Electron Devices Meeting (IEDM). Dec. 2020, accepted.
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[MJC2] D. Milardovich, M. Jech, D. Waldhör, M. Waltl, and T. Grasser. “Machine Learning Prediction of Formation Energies in a-SiO2 ”. In: Proceedings of
the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD). 2020, pp. 339–342.
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[MJC3] B. Ruch, M. Jech, G. Pobegen, and T. Grasser. “Applicability of Shockley–Read–Hall Theory for Interface States”. In: 2020 IEEE International Electron Devices Meeting
(IEDM). Dec. 2020, accepted.
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[MJC4] S. Tyaginov, A. Grill, M. Vandemaele, T. Grasser, G. Hellings, A. Makarov, M. Jech, D. Linten, and B. Kaczer. “A Compact Physics Analytical Model for
Hot-Carrier Degradation”. In: 2020 IEEE International Reliability Physics Symposium (IRPS). 2020, pp. 1–7. doi: 10.1109/IRPS45951.2020.9128327.
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[MJC5] M. Jech, S. Tyaginov, B. Kaczer, J. Franco, D. Jabs, C. Jungemann, M. Waltl, and T. Grasser. “First–Principles Parameter–Free Modeling of n- and p-ET Hot-Carrier
Degradation”. In: 2019 IEEE International Electron Devices Meeting (IEDM). 2019, 24.1.1–24.1.4, Best Student Paper Award. doi: 10.1109/IEDM19573.2019.8993630.
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[MJC6] A. Makarov, B. Kaczer, P. Roussel, A. Chasin, M. Vandemaele, G. Hellings, A.-M. El-Sayed, M. Jech, T. Grasser, D. Linten, and S. Tyaginov. “Stochastic
Modeling of Hot-Carrier Degradation in nFinFETs Considering the Impact of Random Traps and Random Dopants”. In: ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC). 2019,
pp. 262–265. doi: 10.1109/ESSDERC.2019.8901721.
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[MJC7] A. Makarov, B. Kaczer, P. Roussel, A. Chasin, M. Vandemaele, G. Hellings, A.-M. El-Sayed, M. Jech, T. Grasser, D. Linten, and S. E. Tyaginov. “Simulation Study:
The Effect of Random Dopants and Random Traps on Hot-Carrier Degradation in nFinFETs”. In: Extended Abstracts of the International Conference on Solid State Devices and Materials (SSDM). 2019, pp. 609–610.
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[MJC8] S. Tyaginov, A.-M. El-Sayed, A. Makarov, A. Chasin, H. Arimura, M. Vandemaele, M. Jech, E. Capogreco, L. Witters, A. Grill, A. De Keersgieter, G. Eneman,
D. Linten, and B. Kaczer. “Understanding and Physical Modeling Superior Hot-Carrier Reliability of Ge pNWFETs”. In: 2019 IEEE International Electron Devices Meeting (IEDM). 2019, pp. 21.3.1–21.3.4. doi: 10.1109/IEDM19573.2019.8993644.
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[MJC9] S. E. Tyaginov, A. Chasin, A. Makarov, A.-M. El-Sayed, M. Jech, A. De Keersgieter, G. Eneman, M. Vandemaele, J. Franco, D. Linten, and B. Kaczer.
“Physics-based Modeling of Hot-Carrier Degradation in Ge NWFETs”. In: Extended Abstracts of the International Conference on Solid State Devices and Materials (SSDM). 2019, pp. 565–566.
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[MJC10] S. E. Tyaginov, M. Jech, G. Rzepa, A. Grill, A.-M. El-Sayed, G. Pobegen, A. Makarov, and T. Grasser. “Border Trap Based Modeling of SiC Transistor Transfer
Characteristics”. In: Proceedings of the IEEE International Integrated Reliability Workshop (IIRW). 2018. doi: 10.1109/IIRW.2018.8727083.
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[MJC11] Y. Illarionov, M. Waltl, M. Jech, J.-S. Kim, D. Akinwande, and T. Grasser. “Reliability of Black Phosphorus Field-Effect Transistors with Respect to
Bias-Temperature and Hot-Carrier Stress”. In: 2017 IEEE International Reliability Physics Symposium (IRPS). 2017, 6A-6.1–6A-6.6. doi: 10.1109/IRPS.2017.7936338.
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[MJC12] T. Knobloch, G. Rzepa, Y. Illarionov, M. Waltl, F. Schanovsky, M. Jech, B. Stampfer, M. M. Furchi, T. Müller, and T. Grasser. “Physical Modeling of the
Hysteresis in MoS2 Transistors”. In: Proceedings of the European Solid-State Device Research Conference (ESSDERC). 2017, pp. 284–287. doi: 10.1109/ESSDERC.2017.8066647.
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[MJC13] A. Makarov, S. E. Tyaginov, B. Kaczer, M. Jech, A. Chasin, A. Grill, G. Hellings, M. I. Vexler, D. Linten, and T. Grasser. “Hot-Carrier Degradation in FinFETs:
Modeling, Peculiarities, and Impact of Device Topology”. In: 2017 IEEE International Electron Devices Meeting (IEDM). Dec. 2017, pp. 13.1.1–13.1.4. doi: 10.1109/IEDM.2017.8268381.
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[MJC14] G. Rzepa, J. Franco, A. Subirats, M. Jech, A. Chasin, A. Grill, M. Waltl, T. Knobloch, B. Stampfer, T. Chiarella, N. Horiguchi, L. Å. Ragnarsson, D. Linten,
B. Kaczer, and T. Grasser. “Efficient physical defect model applied to PBTI in high-κ stacks”. In: 2017 IEEE International Reliability Physics Symposium (IRPS). 2017, XT-11.1-XT–11.6.
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[MJC15] B. Ullmann, M. Jech, S. Tyaginov, M. Waltl, Y. Illarionov, A. Grill, K. Puschkarsky, H. Reisinger, and T. Grasser. “The Impact of Mixed Negative Bias Temperature
Instability and Hot Carrier stress on Single Oxide Defects”. In: 2017 IEEE International Reliability Physics Symposium (IRPS). Apr. 2017, XT-10.1-XT–10.6. doi: 10.1109/IRPS.2017.7936424.
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[MJC16] S. E. Tyaginov, A. Makarov, M. Jech, J. Franco, P. Sharma, B. Kaczer, and T. Grasser. “On the Effect of Interface Traps on the Carrier Distribution Function During
Hot-Carrier Degradation”. In: Proceedings of the IEEE International Integrated Reliability Workshop (IIRW. 2016, pp. 95–98. doi: 10.1109/IIRW.2016.7904911.
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[MJC17] M. Jech, P. Sharma, S. Tyaginov, F. Rudolf, and T. Grasser. “The Limits of Applicability of the Analytic Model for Hot Carrier Degradation”. In: Extended
Abstracts of the International Conference on Solid State Devices and Materials (SSDM). 2015, PS.3–13.
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[MJC18] P. Sharma, M. Jech, S. Tyaginov, F. Rudolf, K. Rupp, H. Enichlmair, J. Park, and T. Grasser. “Modeling of Hot-Carrier Degradation in LDMOS Devices Using a
Drift-Diffusion Based Approach”. In: 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD). 2015, pp. 60–63. doi: 10.1109/SISPAD.2015.7292258.
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[MJC19] S. Tyaginov, M. Jech, P. Sharma, J. Franco, B. Kaczer, and T. Grasser. “On The Temperature Behavior of Hot-Carrier Degradation”. In: 2015 IEEE
International Integrated Reliability Workshop (IIRW). 2015, pp. 143–146. doi: 10.1109/IIRW.2015.7437088.
