[8] V. Šimonka, A. Toifl, A. Hössinger, S. Selberherr, and J. Weinbub. "Transient Model for Electrical Activation of Aluminium and Phosphorus-Implanted Silicon Carbide". Journal of Applied Physics 123 (2018), pp. 235701-1–235701-7. DOI: 10.1063/1.5031185.
[7] V. Šimonka, A. Hössinger, J. Weinbub, and S. Selberherr. "Modeling and Simulation of Electrical Activation of Acceptor-Type Dopants in Silicon Carbide". Materials Science Forum 924 (2018), pp. 192–195. DOI: 10.4028/www.scientific.net/MSF.924.192.
[6] V. Šimonka, A. Hössinger, J. Weinbub, and S. Selberherr. "Empirical Model for Electrical Activation of Aluminium-and Boron-Implanted Silicon Carbide". IEEE Transactions on Electron Devices 65 (2017), pp. 1–6. DOI: 10.1109/ted.2017.2786086.
[5] V. Šimonka, A. Hössinger, J. Weinbub, and S. Selberherr. "ReaxFF Reactive Molecular Dynamics Study of Orientation Dependence of Initial Silicon Carbide Oxidation". Journal of Physical Chemistry A 121 (2017), pp. 8791–8798. DOI: 10.1021/acs.jpca.7b08983.
[4] V. Šimonka, G. Nawratil, A. Hössinger, J. Weinbub, and S. Selberherr. "Anisotropic Interpolation Method of Silicon Carbide Oxidation Growth Rates for Three-Dimensional Simulation". Solid-State Electronics 128 (2017), pp. 135–14, invited. DOI: 10.1016/j.sse.2016.10.032.
[3] V. Šimonka, A. Hössinger, J. Weinbub, and S. Selberherr. "Growth Rates of Dry Thermal Oxidation of 4H-Silicon Carbide". Journal of Applied Physics 120 (2016), pp. 135705. DOI: 10.1063/1.4964688.
[2] V. Šimonka, M. Fras, and M. Gosak. "Stochastic Simulation of the Circadian Rhythmicity in the SCN Neuronal Network". Physica A 424 (2015), pp. 1-10. DOI: 10.1016/j.physa.2014.12.034.
[1] R. Repnik, S. A. Ranjkesh, V. Šimonka, M. Ambrožič, Z. Bradač, and S. Kralj. "Symmetry Breaking in Nematic Liquid Crystals: Analogy with Cosmology and Magnetism". Journal of Physics: Condensed Matter 25 (2013), pp. 404201-1-404201-10. DOI: 10.1088/0953-8984/25/40/404201.
[1] V. Šimonka, A. Hössinger, J. Weinbub, and S. Selberherr. "Direction Dependent Three-Dimensional Silicon Carbide Oxidation Growth Rate Calculations". Proceedings of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS). 2016, pp. 226–229. DOI: 10.1109/ULIS.2016.7440094.
[11] J. Wörle, V. Šimonka, E. Müller, A. Hössinger, H. Sigg, S. Selberherr, J. Weinbub, M. Camarda, and U. Grossner. "Investigating Orientation-Dependent Oxidation of Macrosteps on 4H-SiC Epilayers". Proceedings of the European Conference on Silicon Carbide and Related Materials (ECSCRM). 2018, in print.
[10] A. Toifl, V. Šimonka, A. Hössinger, S. Selberherr, and J. Weinbub. "Steady-State Empirical Model for Electrical Activation of Silicon-Implanted Gallium Nitride". Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD). 2018, in print.
[9] V. Šimonka, A. Hössinger, J. Weinbub, and S. Selberherr. "Modeling and Simulation of Electrical Activation of Acceptor-Type Dopants in Silicon Carbide". Proceedings of the International Conference on Silicon Carbide and Related Materials (ICSCRM). 2017, p. 2756130.
[8] V. Šimonka, A. Hössinger, J. Weinbub, and S. Selberherr. "Modeling of Electrical Activation Ratios of Phosphorus and Nitrogen Doped Silicon Carbide". Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD). 2017, pp. 125–128. DOI: 10.23919/SISPAD.2017.8085280.
[7] P. Manstetten, V. Šimonka, G. Diamantopoulos, L. Gnam, A. Makarov, A. Hössinger, J. Weinbub. "Computational and Numerical Challenges in Semiconductor Process Simulation". Proceedings of the SIAM Conference on Computational Science and Engineering (CSE). 2017, pp. 46.
[6] V. Šimonka, A. Hössinger, J. Weinbub, and S. Selberherr. "Three-Dimensional Growth Rate Modeling and Simulation of Silicon Carbide Thermal Oxidation". Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD). 2016, pp. 233–236. DOI: 10.1109/SISPAD.2016.7605190.
[5] V. Šimonka, G. Nawratil, A. Hössinger, J. Weinbub, and S. Selberherr. "Geometrical Aspects of Three-Dimensional Silicon Carbide Oxidation Growth Rate Modeling". Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS). 2016, pp. 128–129.
[4] V. Šimonka, M. Fras, and M. Gosak. "Stochastic Simulations of the Spatio-Temporal Circadian Activity in the Suprachiasmatic Nucleus". Proceedings of the Symposia of Physicists University of Maribor. 2014, p. 61.
[3] V. Šimonka, V. Pohorec, A. Fajmut, and M. Brumen. "From Arterial Shear Stress to the Development of Vascular Smooth Muscle Force: Systems Biology Approach". Book of Abstracts of the Conference on Systems Biology of Mammalian Cells. 2014, p. 80.
[2] V. Šimonka, V. Pohorec, A. Fajmut, and M. Brumen. "Role of Nitric Oxide in Pathogenesis of Atherosclerosis: Modelling Approach". Book of Abstracts of the Regional Biophysics Conference. 2014, p. 66.
[1] V. Šimonka, M. Bernhardt, and M. Brumen. "Mathematical Modeling of Regulation of Glucose Concentration in Blood". Book of Abstracts of the Regional Biophysics Conference. 2012, p. 108.
[1] V. Šimonka. "Natančni Fizikalni Modeli 3D Simulatorjev Proizvodnje Mikroelektronskih Naprav". Faculty of Natural Sciences and Mathematics, University of Maribor, Slovenia. 2017, invited.