2.8 Summary of Research Achievements

In summary, within the scope of SiC oxidation, the following research goals have been achieved:

• 1.  A full set of dry SiC oxidation growth rate coefficients for the $(0001)$ Si-, $(11\bar{2}0)$ a-, $(1\bar{1}00)$ m-, and $(000\bar{1})$ C-face has been obtained, which enables high-accuracy simulations of SiC oxidation [72].

• 2.  A novel 3D interpolation method to compute oxidation growth rate coefficients for arbitrary crystal direction has been developed and calibrated. The direction-dependent interpolation method captures oxidation anisotropy of SiC and thus enables the simulation of SiC oxidation for arbitrary crystal orientations and device structures [73].

• 3.  The initial SiC oxidation stages (in the regime of ns) have been investigated in order to extend the understanding of the orientation-dependent oxidation mechanisms and to better estimate initial (i.e., native) oxide thicknesses from first principles simulations [77].