In summary, within the scope of SiC dopant activation, the following research goals have been achieved:
1. A novel temperature-dependent model for activation of Al-, B-, P-, and N-implanted SiC has been developed and calibrated, which enables accurate predictions of doping profiles for arbitrary temperatures after post-implantation annealing steps [136].
2. Two activation models, a semi-empirical model and a transient model, which differ in the number of independent variables, have been calibrated for Al-, B-, P-, and N-implanted SiC. The models have been characterized based on extensive simulations and have been verified via comparisons with experimental data. Finally, numerous process and device simulations have been performed in order to evaluate the modeling approaches and parameters [154], [159].