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Dissertation Stanislav Vitanov
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List of Tables
2.1.
Device/material features and merits of GaN HEMTs.
2.2.
Comparison of different techniques for E-mode structures.
2.3.
Companies offering substrates and GaN-based products.
3.1.
Summary of material parameters of wurtzite GaN for Monte Carlo simulation.
3.2.
Summary of elastic constants of GaN and the resulting longitudinal and transverse elastic constants and sound velocities.
3.3.
Summary of piezoelectric coefficients of GaN for Monte Carlo simulation
of piezoelectric scattering.
3.4.
Summary of material parameters of wurtzite InN for MC simulation.
3.5.
Summary of elastic constants of InN and the resulting longitudinal and transverse elastic constants and sound velocities.
3.6.
Summary of piezoelectric coefficients of InN for MC simulation of piezoelectric scattering.
3.7.
Summary of material parameters of wurtzite AlN for Monte Carlo
simulation.
3.8.
Summary of elastic constants of AlN and the resulting longitudinal and transverse elastic constants and sound velocities.
3.9.
Summary of piezoelectric coefficients of AlN for Monte Carlo simulation of
piezoelectric scattering.
4.1.
Schottky barrier heights of common contacts.
4.2.
Model parameters for the static permittivity.
4.3.
Model parameters for the mass density [g/cm
].
4.4.
Model parameters for the thermal conductivity.
4.5.
Parameter values for the specific heat model.
4.6.
Summary of band structure model parameters.
4.7.
Parameter values for the low-field mobility.
4.8.
Parameters for DD high-field electron mobility Model A.
4.9.
Parameters for DD high-field electron mobility Model B.
4.10.
Parameters for HD high-field electron mobility Model A.
4.11.
Parameters for the energy relaxation times for HD high-field electron mobility Model B [ps].
4.12.
Parameters for the energy relaxation time model [ps].
4.13.
Spontaneous polarization parameters [C/m
].
4.14.
Piezoelectric polarization parameters.
4.15.
Applied parasitic elements for GaN HEMT simulation.
5.1.
Charge density [cm
] for three AlGaN/GaN HEMTs.
5.2.
Layer properties.
5.3.
Summary of values of interface charge density [cm
].
Next:
1. Introduction
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Dissertation Stanislav Vitanov
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List of Figures
Contents
S. Vitanov: Simulation of High Electron Mobility Transistors