Erasmus Langer
Siegfried Selberherr
Elaf Al-Ani
Hajdin Ceric
Siddhartha Dhar
Robert Entner
Klaus-Tibor Grasser
René Heinzl
Clemens Heitzinger
Christian Hollauer
Stefan Holzer
Gerhard Karlowatz
Markus Karner
Hans Kosina
Ling Li
Gregor Meller
Johannes Mesa Pascasio
Mihail Nedjalkov
Alexandre Nentchev
Vassil Palankovski
Mahdi Pourfath
Philipp Schwaha
Alireza Sheikholeslami
Michael Spevak
Viktor Sverdlov
Oliver Triebl
Stephan-Enzo Ungersböck
Martin Wagner
Wilfried Wessner
Robert Wittmann

Ling Li
MSc.
li(!at)iue.tuwien.ac.at
Biography:
Ling Li was born in Sichuan province, China, in 1976. He studied microelectronic engineering at the Institute of Microelectronics, Chinese Academy of Sciencs (CAS), where he received the master's degree in 2004. He joined the Institute for Microelectronics in January 2005, where he is currently working on his doctoral degree. His research activities include organic device modeling and simulation.

Modeling and Simulation of Organic Devices

Organic thin film transistors (OTFT) have gained considerable interest due to their potential applications, and the related device models have been developed in recent years. Now standard drift-diffusion equations implemented in Minimos-NT are being extended for organic transistors. Due to the low conductivity of organic materials, some quantities in the drift-diffusion equations are being newly defined. An equivalent doping model used in silicon and the traps model used in amorphous systems will be incorporated into drift-diffusion equations. An effective density of states in organic materials has been defined which is somewhat different from a single equivalent level used by some authors.
A mobility model based on variable range hopping (VRH) is being extended to be field-dependent for both two-dimensional and three-dimensional space. A connection between the percolation theory and the effective mobility model for accumulation code TFT will be built afterwards based on this result. Further work will focus on the simulation of organic transistors and organic light-emitting diodes using the new drift-diffusion simulator.


The structure of organic field-effect transistor.


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