Activities Erasmus Langer Siegfried Selberherr Preface Oskar Baumgartner Investigation of Tunneling Current in Metal-Oxide-Semiconductor Structures Hajdin Ceric TCAD Solutions for Electromigration Johann Cervenka Micro Structure and Mesh Generation for Electromigration Simulation Otmar Ertl Three-Dimensional Topography Simulation Wolfgang Gös Rigorous Modeling of Charge Trapping Klaus-Tibor Grasser A Triple-Well Model for Bias Temperature Instability Philipp Hehenberger Modeling and Simulation of Bias Temperature Instability and Hot Carrier Effects René Heinzl A Parallel Generic Scientific Simulation Environment Gerhard Karlowatz Full Band Monte Carlo Device Simulation Markus Karner A Comparison of Gate Leakage Current Models for High-k-Metal-Gate-Stacks Hans Kosina Physical Modeling of Advanced Semiconductor Devices Gregor Meller Kinetic Monte Carlo Organic Device Simulation Goran Milovanovic Valence Band Deformation Potentials Mihail Nedjalkov Wigner Simulation of Nanostructures Roberto Orio Electromigration Modeling and Simulation Vassil Palankovski Analysis and Simulation of Advanced Heterostructure Devices Mahdi Pourfath Numerical Study of CNT-FET Infra-Red Photo-Detectors Franz Schanovsky Hydrogen in Semiconductor Devices Philipp Schwaha Typhoon — A Python Module for Rapid-Application-Prototyping Franz Stimpfl Parallel Mesh Generation for Scientific Computing Viktor Sverdlov Electron Mobility Enhancement in Strained Silicon Oliver Triebl Reliability Issues in High-Voltage and Power Semiconductor Devices Stanislav Tyaginov Determination of the Correlation Length of Insulator Thickness Fluctuations Martin-Thomas Vasicek Higher-Order Macroscopic Transport Models for Advanced Semiconductor Devices Stanislav Vitanov Simulation of Novel Heterostructure Field-Effect Transistors Paul-Jürgen Wagner Measurement Techniques for MOS Reliability Issues Thomas Windbacher Biologically Sensitive Field-Effect Transistors
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