List of Figures

• 1.1. Block diagram of a sensor system.
• 1.2. Projection of the micro electro-mechanical sensor (MEMS) unit shipments in the car industry versus year.
• 1.3. Split-drain MOSFET structure.
• 3.1. Hall scattering factor for electrons versus temperature (after [18]).
• 3.2. Cubic representation of a $k$-simplex with its Voronoi volume.
• 4.1. Two-drain MAGFET structure.
• 4.2. Drain currents as a function of the gate voltage at 300 K.
• 4.3. Three-dimensional view of the simulation grid.
• 4.4. Current density at 300 K and zero magnetic field.
• 4.5. Differential current versus magnetic field at 300 K.
• 4.6. Current density at 300 K and a magnetic field of -50 mT.
• 4.7. Simulated $S_r$ as a function of the gate voltage at 300 K and -50 mT.
• 4.8. Simulated $S_r$ and $\Delta$ for a gate swept. $V_{D1}$ and $V_{D2}$ are set to 1.0 V.
• 4.9. Simulated $S_r$ as a function of the drain voltage at 300 K and -50 mT.
• 4.10. Potential in the channel @(20$\mu$m,300K,Vg=0.0V).
• 4.11. Potential in the channel @(20$\mu$m,300K,Vg=1.0V).
• 4.12. Potential in the channel @(20$\mu$m,300K,Vg=2.0V).
• 4.13. Potential in the channel @(20$\mu$m,300K,Vg=3.0V).
• 4.14. Potential in the channel @(20$\mu$m,300K,Vg=4.0V).
• 4.15. Potential in the channel @(20$\mu$m,300K,Vg=5.0V).
• 4.16. Potential in the channel @(50$\mu$m,300K,Vg=0.0V).
• 4.17. Potential in the channel @(50$\mu$m,300K,Vg=1.0V).
• 4.18. Potential in the channel @(50$\mu$m,300K,Vg=2.0V).
• 4.19. Potential in the channel @(50$\mu$m,300K,Vg=3.0V).
• 4.20. Potential in the channel @(50$\mu$m,300K,Vg=4.0V).
• 4.21. Potential in the channel @(50$\mu$m,300K,Vg=5.0V).
• 4.22. Potential in the channel @(80$\mu$m,300K,Vg=0.0V).
• 4.23. Potential in the channel @(80$\mu$m,300K,Vg=1.0V).
• 4.24. Potential in the channel @(80$\mu$m,300K,Vg=2.0V).
• 4.25. Potential in the channel @(80$\mu$m,300K,Vg=3.0V).
• 4.26. Potential in the channel @(80$\mu$m,300K,Vg=4.0V).
• 4.27. Potential in the channel @(80$\mu$m,300K,Vg=5.0V).
• 4.28. Potential in the channel @(110$\mu$m,300K,Vg=0.0V).
• 4.29. Potential in the channel @(110$\mu$m,300K,Vg=1.0V).
• 4.30. Potential in the channel @(110$\mu$m,300K,Vg=2.0V).
• 4.31. Potential in the channel @(110$\mu$m,300K,Vg=3.0V).
• 4.32. Potential in the channel @(110$\mu$m,300K,Vg=4.0V).
• 4.33. Potential in the channel @(110$\mu$m,300K,Vg=5.0V).
• 4.34. Electron concentration in the channel @(20$\mu$m,300K,Vg=0.0V).
• 4.35. Electron concentration in the channel @(20$\mu$m,300K,Vg=1.0V).
• 4.36. Electron concentration in the channel @(20$\mu$m,300K,Vg=2.0V).
• 4.37. Electron concentration in the channel @(20$\mu$m,300K,Vg=3.0V).
• 4.38. Electron concentration in the channel @(20$\mu$m,300K,Vg=4.0V).
• 4.39. Electron concentration in the channel @(20$\mu$m,300K,Vg=5.0V).
• 4.40. Electron concentration in the channel @(50$\mu$m,300K,Vg=0.0V).
• 4.41. Electron concentration in the channel @(50$\mu$m,300K,Vg=1.0V).
• 4.42. Electron concentration in the channel @(50$\mu$m,300K,Vg=2.0V).
• 4.43. Electron concentration in the channel @(50$\mu$m,300K,Vg=3.0V).
• 4.44. Electron concentration in the channel @(50$\mu$m,300K,Vg=4.0V).
• 4.45. Electron concentration in the channel @(50$\mu$m,300K,Vg=5.0V).
• 4.46. Electron concentration in the channel @(80$\mu$m,300K,Vg=0.0V).
• 4.47. Electron concentration in the channel @(80$\mu$m,300K,Vg=1.0V).
• 4.48. Electron concentration in the channel @(80$\mu$m,300K,Vg=2.0V).
• 4.49. Electron concentration in the channel @(80$\mu$m,300K,Vg=3.0V).
• 4.50. Electron concentration in the channel @(80$\mu$m,300K,Vg=4.0V).
• 4.51. Electron concentration in the channel @(80$\mu$m,300K,Vg=5.0V).
• 4.52. Electron concentration in the channel @(110$\mu$m,300K,Vg=0.0V).
• 4.53. Electron concentration in the channel @(110$\mu$m,300K,Vg=1.0V).
• 4.54. Electron concentration in the channel @(110$\mu$m,300K,Vg=2.0V).
• 4.55. Electron concentration in the channel @(110$\mu$m,300K,Vg=3.0V).
• 4.56. Electron concentration in the channel @(110$\mu$m,300K,Vg=4.0V).
• 4.57. Electron concentration in the channel @(110$\mu$m,300K,Vg=5.0V).
• 4.58. Electric field in the channel @(20$\mu$m,300K,Vg=0.0V).
• 4.59. Electric field in the channel @(20$\mu$m,300K,Vg=1.0V).
• 4.60. Electric field in the channel @(20$\mu$m,300K,Vg=2.0V).
• 4.61. Electric field in the channel @(20$\mu$m,300K,Vg=3.0V).
• 4.62. Electric field in the channel @(20$\mu$m,300K,Vg=4.0V).
• 4.63. Electric field in the channel @(20$\mu$m,300K,Vg=5.0V).
• 4.64. Electric field in the channel @(50$\mu$m,300K,Vg=0.0V).
• 4.65. Electric field in the channel @(50$\mu$m,300K,Vg=1.0V).
• 4.66. Electric field in the channel @(50$\mu$m,300K,Vg=2.0V).
• 4.67. Electric field in the channel @(50$\mu$m,300K,Vg=3.0V).
• 4.68. Electric field in the channel @(50$\mu$m,300K,Vg=4.0V).
• 4.69. Electric field in the channel @(50$\mu$m,300K,Vg=5.0V).
• 4.70. Electric field in the channel @(80$\mu$m,300K,Vg=0.0V).
• 4.71. Electric field in the channel @(80$\mu$m,300K,Vg=1.0V).
• 4.72. Electric field in the channel @(80$\mu$m,300K,Vg=2.0V).
• 4.73. Electric field in the channel @(80$\mu$m,300K,Vg=3.0V).
• 4.74. Electric field in the channel @(80$\mu$m,300K,Vg=4.0V).
• 4.75. Electric field in the channel @(80$\mu$m,300K,Vg=5.0V).
• 4.76. Electric field in the channel @(110$\mu$m,300K,Vg=0.0V).
• 4.77. Electric field in the channel @(110$\mu$m,300K,Vg=1.0V).
• 4.78. Electric field in the channel @(110$\mu$m,300K,Vg=2.0V).
• 4.79. Electric field in the channel @(110$\mu$m,300K,Vg=3.0V).
• 4.80. Electric field in the channel @(110$\mu$m,300K,Vg=4.0V).
• 4.81. Electric field in the channel @(110$\mu$m,300K,Vg=5.0V).
• 4.82. Drain currents as a function of the gate voltage at 77 K.
• 4.83. Differential current versus magnetic field at 77 K and 300 K.
• 4.84. Simulated $S_r$ as a function of the gate voltage at 77 K and -50 mT.
• 4.85. Simulated $S_r$ and $\Delta$ for a gate swept. $V_{D1}$ and $V_{D2}$ are set to 1.0 V.
• 4.86. Simulated $S_r$ as a function of the drain voltage at 77 K and -50 mT.
• 4.87. Potential in the channel @(110$\mu$m,77K,Vg=1.0V).
• 4.88. Potential in the channel @(110$\mu$m,77K,Vg=5.0V).
• 4.89. Electron concentration in the channel @(110$\mu$m,77K,Vg=1.0V).
• 4.90. Electron concentration in the channel @(110$\mu$m,77K,Vg=5.0V).
• 4.91. Electric field in the channel @(110$\mu$m,77K,Vg=1.0V).
• 4.92. Electric field in the channel @(110$\mu$m,77K,Vg=5.0V).
• 4.93. Simulated $S_r$ for different distances between the drains.
• 4.94. Simulated relative sensitivity for different lengths.
• 4.95. Simulated relative sensitivity for different widths.
• 5.1. Three-drain MAGFET structure.
• 5.2. Simulated drain currents as a function of the gate voltage at 300 K.
• 5.3. Simulated drain currents versus magnetic field at 300 K.
• 5.4. Simulated differential current versus magnetic field at 300 K.
• 5.5. Simulated $S_r$ as a function of the gate voltage at 300 K and -50 mT.
• 5.6. Simulated $S_r$ as a function of the drain voltage at 300 K and -50 mT.
• 5.7. Simulated drain currents as a function of the gate voltage at 77 K.
• 5.8. Simulated drain currents versus magnetic field at 77 K.
• 5.9. Simulated differential current versus magnetic field at 77 K.
• 5.10. Simulated $S_r$ as a function of the gate voltage at 77 K and -50 mT.
• 5.11. Simulated $S_r$ as a function of the drain voltage at 77 K and -50 mT.
• 5.12. Simulated $S_r$ for different distances between the drains.
• 5.13. Simulated relative sensitivity for different lengths.
• 5.14. Simulated relative sensitivity for different widths.
• 5.15. Simulated $S_r$ and $I_{D2}$ for different sizes of Drain 2.
• 5.16. Simulated $I_{D1,3}/I_{D2}$ ratio for different sizes of Drain 2.