Contents

• List of Figures
• 1. Introduction
  • 1.1 Solid-State Sensors
  • 1.2 Magnetic Sensors
  • 1.3 Magnetic Effects in Semiconductors
  • 1.4 Specifications of Magnetic Sensors
  • 1.5 Magnetic MOS Field-Effect-Transistor
  • 1.6 Organization of the Thesis
  
  
• 2. Galvanomagnetic Effects in Semiconductors
  • 2.1 Introduction
  • 2.2 Formal Transport Theory
  • 2.3 The Thermodynamic Model
  • 2.4 General Form of the Transport Equations
    • 2.4.1 Fluxes and Forces
    • 2.4.2 The Onsager Relations
    • 2.4.3 General Transport Equations
    • 2.4.4 Transport Coefficients without a Magnetic Field
    • 2.4.5 Transport Coefficients with a Magnetic Field
  • 2.5 Compact Vector Formulation
  • 2.6 The Isothermal Approximation
  • 2.7 Boundary Conditions
  
  
• 3. Implementation
  • 3.1 The Computation of the Vector Product
  • 3.2 The New Discretization Procedure
  • 3.3 Previous Attempts
  
  
• 4. Two-Drain MAGFET
  • 4.1 The Structure
  • 4.2 Analysis at 300 K
    • 4.2.1 Electrical Characteristics
    • 4.2.2 Magnetic Field
    • 4.2.3 Bias Dependence
    • 4.2.4 Channel Region
  • 4.3 Analysis at 77 K
    • 4.3.1 Electrical Characteristics
    • 4.3.2 Magnetic Field
    • 4.3.3 Bias Dependence
    • 4.3.4 Channel Region
  • 4.4 Geometric Parameters
  • 4.5 Conclusions
  
  
• 5. Three-Drain MAGFET
  • 5.1 The Structure
  • 5.2 Analysis at 300 K
    • 5.2.1 Electrical Characteristics
    • 5.2.2 Magnetic Field
    • 5.2.3 Bias Dependence
  • 5.3 Analysis at 77 K
    • 5.3.1 Electrical Characteristics
    • 5.3.2 Magnetic Field
    • 5.3.3 Bias Dependence
  • 5.4 Geometric Parameters
  • 5.5 Conclusions
  
  
• 6. Summary and Outlook
• Bibliography