Chapter 2 focuses on the semi-classical transport theory and shows basic equations to describe the transport in a semiconductor device. The limitations are also discussed. The classical propagation as particles and the
quantum-mechanical scattering are described there. Further, the fundamentals of band-structure calculation are briefly addressed.
Chapter 3 is dealing with different approaches to model the carrier transport in a semiconductor device. The solution of the BTE can be estimated by using the method of moments and its well-known representative, the
drift-diffusion (DD) equations, by using spherical harmonics expansion (SHE) and solving the BTE deterministically, or by a stochastic solution method called Monte Carlo. All these methods have their advantages and drawbacks,
which will be discussed there.
Chapter 4 describes the backward MC method proposed in the 1980s and its mathematical stability problems. A stable method, proposed in 2003 and its implementation, as well as various current estimators are discussed
in this chapter. Moreover, results of semiconductor device simulations presented.
Chapter 5 is focused on the modeling of electron-electron scattering (EES). With the BMC method, there is now a possibility to investigate hot-carriers in MC simulations more efficiently. This chapter introduces an EES
model derived from physical reflections to describe the relaxation of channel hot-carriers in the drain region of a MOSFET.