In the current implementation of the EES, the mixing of hot and cold carriers is described. This approximation is valid in the drain region, where the hot electrons from the channel are mixing with the cold electrons in the drain. In order to scatter electrons with a more realistic distribution, a novel two particle MC algorithm could be implemented. This two particle algorithm was already implemented and tested for bulk silicon. The extension to the space-dependent case has yet to be developed [41]. With this novel algorithm, the effect of EES on the high-energy-tail can be investigated not only in the drain region but also in the channel of a MOSFET.
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