5. Physical Modeling of PbTe and PbSnTe

THE FOCUS OF THIS CHAPTER is put on the characterization of physical material properties of lead telluride as well as lead-tin telluride. Material parameters are collected from literature, where parameters needed for both device simulation as well as Monte Carlo simulations are considered. While the formulation of appropriate models for lead telluride is in the foreground, the consideration of lead-tin telluride opens interesting insights to properties of this material class. Models available in the literature are carefully compared and extended by own formulations based on collected measurement data. In the sequel, physical quantities and according models are introduced for the groups of lattice properties, thermal properties, band structure, carrier mobility, as well as generation and recombination.

Subsections

• 5.1 Lattice Properties
  • 5.1.1 Lattice Constant, Thermal Expansion, and Mass Density
  • 5.1.2 Dielectric Constant
  • 5.1.3 Elastic Moduli and Sound Velocities
  
  
• 5.2 Thermal Properties
  • 5.2.1 Specific Heat Capacity
  • 5.2.2 Thermal Conductivity
  • 5.2.3 Thermoelectric Powers
  
  
• 5.3 Band Structure
  • 5.3.1 Band Gap
  • 5.3.2 Effective Masses, Density of States, Intrinsic Carrier Density
  
  
• 5.4 Carrier Mobility
• 5.5 Generation and Recombination
  • 5.5.1 Direct Recombination
  • 5.5.2 Shockley-Read-Hall Recombination
  • 5.5.3 Auger Recombination

M. Wagner: Simulation of Thermoelectric Devices