Dissertation
Advanced Electrical Characterization of
Charge Trapping in MOS Transistors
zur Erlangung des akademischen Grades
Doktor der technischen Wissenschaften
eingereicht an der
Technische Universität Wien
Fakultät für Elektrotechnik und Informationstechnik
von
Dipl.-Ing. Bernhard Stampfer
Matr. Nr. 00927191
geboren am 27. Februar 1989 in Hall i.T., Österreich
unter Betreuung von
Univ.Prof. Dipl.-Ing. Dr.techn. Tibor Grasser
und
Dipl.-Ing. Dr.techn. Michael Waltl
Wien, 28. Oktober 2020
1.1 History of the Field Effect Transistor
1.2 Reliability Issues in Field Effect Transistors
2 Defects in Field Effect Transistors
2.3 Semiconductor Bulk Defects
3 Modeling and Simulation of Defects
3.1 Defect Models for Charge Trapping
3.1.1 The Shockley-Read-Hall Model
3.1.2 The Kirton and Uren Model
3.1.5 The Hydrogen Release Model
3.2.2 Defects in Device Simulation
3.2.3 Defects in Circuit Simulation
4 Methods of Defect Characterization
4.1 Electrical Methods based on Channel Conductivity
4.1.1 Random Telegraph Noise (RTN) Measurements
4.1.2 Measure-Stress-Measure (MSM) Methods
4.1.3 Extended Measure-Stress-Measure (eMSM)
4.1.4 On-the-Fly (OTF) Measurement
4.2 Electrical Methods based on Defect Charge
4.2.1 Capacitance-Voltage (CV)
4.2.3 Deep-Level Transient Spectroscopy (DLTS)
4.2.4 Direct-Current IV (DCIV)
4.2.5 Thermal Dielectric Relaxation Current (TDRC)
4.3 Physical Characterization Methods
4.3.1 Electron Paramagnetic Resonance (EPR)
4.3.2 X-Ray Photoelectron Spectroscopy (XPS)
4.3.3 Secondary Ion Mass Spectroscopy (SIMS)
4.3.4 Neutron Activation Analysis (NAA)
5 Defect Parameter Extraction from RTN, TDDS, and CV Measurements
5.1 Random Telegraph and TDDS Signals
5.1.1 Histogram and Lag Methods
5.1.4 Estimations for Trap Level and Position
5.1.5 Frequency Domain Methods
5.1.6 Time-Dependent Defect Spectroscopy
5.2 Capacitance-Voltage Measurements
6.1 Statistical Characterization of Defects Causing RTN in SiO2 Transistors
6.1.1 Devices and Measurements
6.2 Defect Centric Evaluation of RTN and BTI using pMOS Arrays
6.2.4 Simulation and Extrapolation
6.2.5 Bulk and Drain Bias Dependence
