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Advanced Electrical Characterization of Charge Trapping in MOS Transistors

List of Abbreviations

ADC

analog-to-digital coverter

aRTN

anomalous RTN

BCSUM

bootstrapping and cumulative sum

BJT

bipolar junction transistor

BTI

bias temperature instability

CCD

charge coupled device

CCDF

complementary cumulative density function

CDF

cumulative density function

CMOS

complementary MOS

CP

charge pumping

CV

capacitance-voltage

DAC

digital-to-analog coverter

DCIV

direct-current current-voltage

DFT

density functional theory

DIBL

drain-induced barrier lowering

DLTS

deep-level transient spectroscopy

DUT

device under test

eMSM

extended MSM

EPR

electron paramagnetic resonance

ESR

electron spin resonance

FET

field-effect transistor

FHMM

factorial HMM

GIDL

gate-induced drain leakage

HC

hot carrier

HMM

hidden Markov model

I\( ^2 \)C

inter-integrated circuit

IV

current-voltage

MIS

metal-insulator-semiconductor

MOS

metal-oxide-semiconductor

MoS(math image)

molybdenum disulfide

MOSCAP

MOS capacitor

MOSFET

MOS field-effect-transistor

MSM

measure stress measure

NMP

non-radiative multi-phonon

NMR

nuclear magnetic resonance

OPAMP

operational amplifier

OTF

on-the-fly

PDF

probability density function

PES

potential energy surface

PSD

power spectral density

RAM

random access memory

RTN

random telegraph noise

RTS

random telegraph signal

SILC

stress induced leakage current

SIMS

secondary ion mass spectroscopy

SMU

source measure unit

SNR

signal-to-noise ratio

SPICE

simulation program with integrated circuit emphasis

SRH

Shockley–Read–Hall

TCAD

technology computer-aided design

TDDS

time-dependent defect spectroscopy

TDRC

thermal dielectric relaxation current

USB

universal serial bus

WKB

Wentzel–Kramers–Brillouin

XPS

X-ray photoelectron spectroscopy