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Advanced Electrical Characterization of Charge Trapping in MOS Transistors

List of Publications

Scientific Journals, Book Contribution

  • [BSJ1] B. Stampfer, A. Grill, and M. Waltl. “Advanced Electrical Characterization of Single Oxide Defects Utilizing Noise Signals”. In: Noise in Nanoscale Semiconductor Devices. Springer International Publishing, 2020, pp. 229–257. doi: 10.1007/978-3-030-37500-3_7.

  • [BSJ2] B. Stampfer, F. Schanovsky, T. Grasser, and M. Waltl. “Semi-Automated Extraction of the Distribution of Single Defects for nMOS Transistors”. In: Micromachines 11.4 (Apr. 2020), p. 446. issn: 2072-666X. doi: 10.3390/mi11040446.

  • [BSJ3] B. Stampfer, M. Simicic, P. Weckx, A. Abbasi, B. Kaczer, T. Grasser, and M. Waltl. “Extraction of Statistical Gate Oxide Parameters from Large MOSFET Arrays”. In: IEEE Transactions on Device and Materials Reliability (2020), pp. 1–1. issn: 1530-4388. doi: 10.1109/tdmr.2020.2985109.

  • [BSJ4] M. Waltl, B. Stampfer, G. Rzepa, B. Kaczer, and T. Grasser. “Separation of Electron and Hole Trapping Components of PBTI in SiON nMOS Transistors”. In: Microelectronics Reliability (2020), p. 113746. issn: 0026-2714. doi: 10.1016/j.microrel.2020.113746.

  • [BSJ5] A. Grill, B. Stampfer, K.-S. Im, J.-H. Lee, C. Ostermaier, H. Ceric, M. Waltl, and T. Grasser. “Electrostatic Coupling and Identification of Single-Defects in GaN/AlGaN Fin-MIS-HEMTs”. In: Solid-State Electronics 156 (June 2019), pp. 41–47. issn: 0038-1101. doi: 10.1016/j.sse.2019.02.004.

  • [BSJ6] B. Stampfer, F. Zhang, Y. Y. Illarionov, T. Knobloch, P. Wu, M. Waltl, A. Grill, J. Appenzeller, and T. Grasser. “Characterization of Single Defects in Ultrascaled MoS2 Field-Effect Transistors”. In: ACS Nano 12.6 (June 2018), pp. 5368–5375. issn: 1936-0851. doi: 10.1021/acsnano.8b00268.

  • [BSJ7] T. Knobloch, G. Rzepa, Y. Y. Illarionov, M. Waltl, F. Schanovsky, B. Stampfer, M. M. Furchi, T. Mueller, and T. Grasser. “A Physical Model for the Hysteresis in MoS2 Transistors”. In: IEEE Journal of the Electron Devices Society 6 (2018), pp. 972–978. issn: 2168-6734. doi: 10.1109/jeds.2018.2829933.

Conference Proceedings

  • [BSC1] T. Grasser, B. Kaczer, B. O’Sullivan, G. Rzepa, B. Stampfer, and M. Waltl. “The Mysterious Bipolar Bias Temperature Stress from the Perspective of Gate-Sided Hydrogen Release”. In: 2020 IEEE International Reliability Physics Symposium (IRPS). 2020, pp. 1–6. doi: 10.1109/IRPS45951.2020.9129198.

  • [BSC2] B. Stampfer, M. Simicic, P. Weckx, A. Abbasi, B. Kaczer, T. Grasser, and M. Waltl. “Statistical Characterization of BTI and RTN using Integrated pMOS Arrays”. In: 2019 IEEE International Integrated Reliability Workshop (IIRW). IEEE, Oct. 2019. doi: 10.1109/iirw47491.2019.8989904.

  • [BSC3] T. Grasser, B. Stampfer, M. Waltl, G. Rzepa, K. Rupp, F. Schanovsky, G. Pobegen, K. Puschkarsky, H. Reisinger, B. O’Sullivan, and B. Kaczer. “Characterization and Physical Modeling of the Temporal Evolution of Near-interfacial States Resulting from NBTI/PBTI Stress in nMOS/pMOS Transistors”. In: 2018 IEEE International Reliability Physics Symposium (IRPS). IEEE, Mar. 2018. doi: 10.1109/irps.2018.8353540.

  • [BSC4] T. Grasser, M. Waltl, K. Puschkarsky, B. Stampfer, G. Rzepa, G. Pobegen, H. Reisinger, H. Arimura, and B. Kaczer. “Implications of Gate-sided Hydrogen Release for Post-stress Degradation Build-up After BTI Stress”. In: 2017 IEEE International Reliability Physics Symposium (IRPS). IEEE, Apr. 2017. doi: 10.1109/irps.2017.7936334.

  • [BSC5] A. Grill, B. Stampfer, M. Waltl, K.-S. Im, J.-H. Lee, C. Ostermaier, H. Ceric, and T. Grasser. “Characterization and Modeling of Single Defects in GaN/AlGaN Fin-MIS-HEMTs”. In: 2017 IEEE International Reliability Physics Symposium (IRPS). IEEE, Apr. 2017. doi: 10.1109/irps.2017.7936285.

  • [BSC6] T. Knobloch, G. Rzepa, Y. Y. Illarionov, M. Waltl, F. Schanovsky, M. Jech, B. Stampfer, M. M. Furchi, T. Muller, and T. Grasser. “Physical Modeling of the Hysteresis in MoS2 Transistors”. In: 2017 47th European Solid-State Device Research Conference (ESSDERC). IEEE, Sept. 2017. doi: 10.1109/essderc.2017.8066647.

  • [BSC7] G. Rzepa, J. Franco, A. Subirats, M. Jech, A. Chasin, A. Grill, M. Waltl, T. Knobloch, B. Stampfer, T. Chiarella, N. Horiguchi, L. A. Ragnarsson, D. Linten, B. Kaczer, and T. Grasser. “Efficient Physical Defect Model Applied to PBTI in High-κ Stacks”. In: 2017 IEEE International Reliability Physics Symposium (IRPS). IEEE, Apr. 2017. doi: 10.1109/irps.2017.7936425.

Master Thesis

  • [BST1] B. Stampfer. “Trap Assisted Tunneling and Band Interaction using the Non-Radiative Multi Phonon Model”. MA thesis. Technische Universität Wien, 2016.